Spectral index variations in Kepler’s supernova remnant

DeLaney, Tracey; Koralesky, Barron; Rudnick, Lawrence; Dickel, John R.

doi:10.1063/1.1377106

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2013

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“…InP is a widely applied direct bandgap semiconductor with potential applications in various photonic integrated circuits and optoelectronics. In addition, with growing In x Ga 1-x As and Al x Ga 1-x As layers lattice-matched to an InP substrate, practical devices, such as InP based solar cells and HEMTs, have been developed (2,3). To fabricate these devices, an InP substrate is required for subsequent epitaxial growth; however the substrate itself is not necessary in the final device structure.…”

Section: Introductionmentioning

confidence: 99%

Development of Porous InP for Subsequent Epitaxial Layer Transfer onto Flexible Substrates

Kou

Goorsky

2013

ECS Trans.

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In order to reduce substrate cost and produce integrated III-V semiconductor device structure, porous InP layer was formed on an InP substrate to be used a mechanically weak layer to assist lift-off of subsequent epitaxial grown layer which need to be transferred onto another substrate. This process follows the work done for ELTRAN (Epitaxial Layer TRANsfer) in the silicon material system(1). In this work, electrochemical etching was used to fabricate a dual porous layer and the sample was annealed to reconstruct porous structure and get ready for epitaxial deposition. The result of bonding and transferring process leaves a 2 μm InP layer on PDMS substrate, and it indicates promising application in flexible optoelectronics.

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Section: Introductionmentioning

confidence: 99%