Spectral distribution of photoelectrical current and free carrier life time of Tex(Sb10Se90)100−x thin films

Abdel-Rahim, Farid M.; Aly, K.A.; Shatir, Tahani M.

doi:10.1016/j.jallcom.2012.05.042

Cited by 4 publications

(1 citation statement)

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“…Moreover, there are many attempts that have been carried out to correlate the bulk modulus (B) of chalcopyrite and compound semiconductors with other physical parameters such as optical band gap (E g ), refractive index (n) and electronegativity (w) [25]. Based on the dielectric theory [26][27][28] and the bond charge model of Levine, the electronic polarizability for different materials has been calculated by several investigators [29][30][31]. The present work deals with the study of the effect of tin additions on the optical constants of Ge 1 Se 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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Different compositions of amorphous Sn x (GeSe) 100-x (0.0 B x B 0.12 at.%) thin films were deposited onto glass substrates by the thermal evaporation technique. The optical constants (n and k) and film thicknesses of Sn x (GeSe) 100-x thin films were obtained based only on their measured reflectance spectra in the wavelength range 300-2500 nm. It was found that the refractive index (n) increased while the optical energy gap (E g ) decreased with increasing tin content. The possible optical transition in these films obeys the allowed non-direct transitions. The obtained results were discussed in terms of the electronic polarizability (a e ). The dispersion parameters [the single-oscillator energy (E 0 ) and the dispersion energy (E d )] were obtained by fitting the refractive index according to Wemple and Di-Domenico model. The third-order nonlinear optical susceptibility v (3) was calculated with the help of E 0 and E d values. The obtained values of v (3) are too high, indicating that the films under study are interesting materials for nonlinear optical devices.

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