Spectral Change of E− Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

Haque, Md. Dulal; Kamata, Norihiko; Islam, A. Z. M. Touhidul; Yagi, Shuhei; Yaguchi, Hiroyuki

doi:10.1007/s11664-019-07856-6

“…In previous work, with temperature‐dependent properties, we used temperature‐controlled metal cryostat for TWEPL measurement. [ 37,38,40,50–54 ] Based on these studies, we prepared a glass cryostat for the TWEPL measurement in which the sample was immersed in liquid nitrogen (N 2 ) directly to avoid surface temperature effect. Two different light sources of AGE, a THG Nd:YAG laser with hν A 1 = 3.49 eV (355 nm wavelength) and a semiconductor laser with hν A 2 = 2.33 eV (532 nm), were used as CB excitation and IB excitation, respectively.…”

Section: Methodsmentioning

confidence: 99%

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

Ferdous

¹

,

Iwai

²

,

Kamata

³

et al. 2021

Physica Status Solidi (b)

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Presence and influence of nonradiative recombination (NRR) centers in an intermediate band (IB)‐type material, GaP1–xNx (x=0.75%), are studied by two‐wavelength excited photoluminescence (TWEPL) method and time‐resolved photoluminescence (TRPL) measurement at 77 K. With the use of below‐gap excitation (BGE) light in addition to an above‐gap excitation (AGE), the PL peak intensity is found to increase which indicates the presence of NRR centers and a secondary excitation from the IB to conduction band (CB). Depending on the effect of different BGE energies, an energy diagram on the distribution of NRR centers and NRR process is interpreted. The saturation of PL increase is attributed to the trap‐filling effect in NRR centers, which allows us to modify the rate equation. The NRR parameters are evaluated by a qualitative simulation of the modified rate equations of one‐level model together with the lifetime determined by TRPL. In continuation of evaluating NRR parameters by rate equation analysis, the addition of TRPL measurement improves accuracy and approaches the determination of NRR parameters. A successful characterization of NRR centers leads to a proper optimization of IB‐type solar cells (IBSCs).

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“…The investigation about optical and morphological properties of GaAsN compound solar cell has been performed by different research groups [8][9][10][11][12]. The theoretical maximum efficiency of about 30.10% and 29.00% has been reported for optimized GaInP/GaAs/GaInNAs and GaInNAs solar cell [13].…”

Section: Introductionmentioning

confidence: 99%

“…The introduction of various defects in GaAsN during the incorporation of N atoms that reduces the number of generated photoelectrons causes low efficient. The scattering of alloy and non-homogeneity of N atoms reduces the electron mobility and minority carrier lifetimes with enhanced nonradiative recombination of the flowing photo-generated carriers towards the electrodes and restricts to increase performance of GaAsN/GaAs solar cell [7,11]. The solar cell with AlGaAs blocking layer can significantly increases the open circuit voltage and consequently increase the efficiency [16].…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light

Haque¹,

Ali²,

Hossain³

et al. 2022

Phys. Scr.

2

0

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In the present study, the performance parameters of GaAsN dilute nitride-based semiconductor solar cell with and without AlGaAs blocking layers have been investigated in detail by Solar Cell Capacitance Simulator in one dimensional software program (SCAPS-1D). The thickness of absorber, buffer, and blocking layers are varied to achieve the improvement of open circuit voltage, short circuit current, fill factor, efficiency and also to optimize the device structure. The impact of doping and defect densities on the solar cell performance parameters have been analyzed minutely inside the absorber, buffer, and blocking layers. The solar cell thermal stability parameters are also investigated in the temperature region from 273K to 373K. The efficiency of 43.90% and 40.05% are obtained from the proposed solar cells with and without AlGaAs blocking layer, respectively. The present findings may provide insightful approach for fabricating feasible, cost effective, and efficient dilute nitride solar cell.

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“…The introduction of various defects in GaAsN during the incorporation of N atoms that reduces the number of generated photoelectrons causes this low efficient. The scattering of alloy and non-homogeneity of N atoms reduces the electron mobility and minority carrier lifetimes with enhanced nonradiative recombination of the flowing photo-generated carriers towards the electrodes and restricts to increase performance of GaAsN/GaAs solar cell [7,11]. The solar cell with AlGaAs blocking layer can significantly increases the open circuit voltage and consequently increase the efficiency [16].…”

Section: Introductionmentioning

confidence: 99%

“…The investigation about optical and morphological properties of GaAsN compound solar cell has been performed by different research groups [8][9][10][11][12]. The theoretical maximum efficiency of about 30.10% and 29.00% has been reported for optimized GaInP/GaAs/GaInNAs and GaInNAs solar cell [13].…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of GaAsN Based Solar Cell with AlGaAs Blocking Layer for Harvesting Visible To Near-Infrared Light

Haque

¹

,

Ali

²

,

Halim

³

et al. 2021

Preprint

Self Cite

0

View full text Add to dashboard Cite

In the present study, the performance parameters of GaAsN dilute nitride-based semiconductor solar cell with and without AlGaAs blocking layers have been investigated in detail by Solar Cell Capacitance Simulator in one dimensional software program (SCAPS-1D). The thickness of absorber, buffer, and blocking layers are varied to achieve the improvement of open circuit voltage, short circuit current, fill factor, efficiency and also to optimize the device structure. The impact of doping and defect densities on the solar cell performance parameters have been analyzed minutely inside the absorber, buffer, and blocking layers. The solar cell thermal stability parameters are also investigated in the temperature region from 273K to 373K. The efficiency of 43.90% and 40.05% are obtained from the proposed solar cells with and without AlGaAs blocking layer, respectively. The present findings may provide insightful approach for fabricating feasible, cost effective, and efficient dilute nitride solar cell.

show abstract

Spectral Change of E− Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

Cited by 4 publications

References 29 publications

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence

Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light

Design and Simulation of GaAsN Based Solar Cell with AlGaAs Blocking Layer for Harvesting Visible To Near-Infrared Light

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