Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell

Abstract

3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell have been investigated. Proton fluences are calculated by MUSALISS software based on the equivalent displacement damage method. SRIM simulation is used to analyze the irradiation damage. The result shows that the external quantum efficiency (EQE) and electrical parameters of the solar cell are degraded by both 3 MeV and 10 MeV proton irradiation. The degradation of EQE is larger in the longer wavelength region because of the higher probability of carrier lifetime reduction in the base region of the solar cell, and the 3 MeV proton produced more degradation of the electrical parameters of the solar cell than that of 10 MeV proton irradiation under the same displacement damage dose.