2009
DOI: 10.1109/jqe.2009.2013174
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Spectral Analysis of 1.55-$\mu$m InAs–InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

Abstract: In this paper, a theoretical model is used to investigate the lasing spectrum properties of InAs-InP(113)B quantum dot (QD) lasers emitting at 1.55 m. The numerical model is based on a multipopulation rate equations analysis. Calculations take into account the QD size dispersion as well as the temperature dependence through both the inhomogeneous and the homogeneous broadenings. This paper demonstrates that the model is capable of reproducing the spectral behavior of InAs-InP QD lasers. Especially, this study … Show more

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Cited by 69 publications
(48 citation statements)
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“…Simulation of quantum dot lasers with two lasing states for InGaAs/GaAs quantum dot lasers emitting in 1.3 lm wavelength is also presented in [12][13][14]. Similar studies for (113)B InAs/InP quantum dot lasers are considered in [15,16] Note that at high bias condition, it has been shown in the aforementioned studies that the transition of lasing state occurs from the ground state to the excited state. Differential gain and linewidth enhancement factor are studied in [17,18].…”
Section: Introductionmentioning
confidence: 98%
“…Simulation of quantum dot lasers with two lasing states for InGaAs/GaAs quantum dot lasers emitting in 1.3 lm wavelength is also presented in [12][13][14]. Similar studies for (113)B InAs/InP quantum dot lasers are considered in [15,16] Note that at high bias condition, it has been shown in the aforementioned studies that the transition of lasing state occurs from the ground state to the excited state. Differential gain and linewidth enhancement factor are studied in [17,18].…”
Section: Introductionmentioning
confidence: 98%
“…On the other hand, in addition to the cascade relaxations, a direct channel for relaxation of carriers from the WL to the GS is considered for 1.55µm InAs/InP QD lasers. This assumption is based on previous experimental reports on kinetics of these kinds of QD lasers [20]. Fig.…”
Section: Theoretical Modelingmentioning
confidence: 96%
“…1 (a) The schematic of 1.55µm QD laser structure (b) Carrier transition times. An excess number of carriers are provided to the ES through absorption of the external optical pump [20].…”
Section: Theoretical Modelingmentioning
confidence: 99%
“…In the model the homogeneous and inhomogeneous broadening are taken into account as well as the occupation dependent capture times and temperature and energy level dependent escape times. Also we did not include the Auger effect (Grillot et al 2009) or any other many body effects, and no direct relaxation from WL to GS (Grillot et al 2009) or any other higher energy states in the dots (Rossetti et al 2008). Inclusion of these aspects would significantly increase the number and complexity of the equations and increase calculation times too much.…”
Section: Quantum Dot Amplifier Gain Modelmentioning
confidence: 99%
“…The modeling of QD materials is more involved than the modeling of bulk or quantum well gain material due to the inhomogeneous character of the QD gain material. Extensive QD models have been presented especially for In x Ga 1−x As/GaAs QD materials (Sugawara et al 2000;Gioannini and Montrosset 2007) but also for InAs/InP QD materials (Grillot et al 2009) Here we have simplified a commonly used QD amplifier model to calculate the small signal gain spectrum of the amplifiers and to fit a number of the model parameters to the experimental data. Three important parameters are the electron-hole transition energies of the wetting layer (WL), the excited state (ES) and the ground state (GS).…”
Section: Introductionmentioning
confidence: 99%