Spectra of absorption, luminescence, and stimulated emission of neodymium in crystals of mixed yttrium and gadolinium scandates

Abstract

Monocrystals of simple and mixed rare earth scandates are synthesized. The absorption and luminescence spectra of neodymium in mixed scandates of yttrium and gadolinium are investigated, especially the nature and the structure of arising activator centres. It is shown that the scandium ion may partially replace the crystallographic sites that are characteristic of RE ions. Diagrams of neodymium energy levels in mixed scandates are plotted basing on the performed spectroscopic investigations. At 77 and 300 K a stimulated emission phenomenon is obtained.

Exploring pure and RE co-doped (Eu3+, Tb3+ and Dy3+) gadolinium scandate: Luminescence behaviour and dynamics of energy transfer

“…Few reports on luminescence study of cerium ion in GdScO 3 [15,16] and Nd 3+ ion in mixed scandates of Yttrium and gadolinium [17] do exist in literature but they are scarce. Given the importance of the research on phosphors for solid state lighting coupled with the fact that rare earth scandates is a hitherto an unexplored class for this applications despite possessing all the favourable properties was the motivation this work.…”

Growth and Characterization of Neodymium-Doped Yttrium Scandate Crystal Fiber with a Bixbyite-type Crystal Structure

“…In the bixbyite-type structure, there is one position for the oxygen atom and two symmetrically different positions for cations (Table 2). The refinement of the occupancies for cationic positions revealed a mixed population of both sites by Sc 3+ and Y 3+ cations in the almost equal ratio 0.579(12): 0.421 (12) (for 24d Wyckoff position) and 0.580(13): 0.420(13) (for 8b Wyckoff position). Too low amount of Nd atoms, established by the X-ray spectral analyses in the crystal composition, did not allow refining its position in the structure.…”

“…These ternary oxides with a high dielectric constant, low leakage current, high thermal budget, and high-energy optical bandgap may be used as high-k gate insulators in complementary metal-oxide-semiconductor (CMOS) technologies, in novel electronic material systems and devices, in printed, flexible thin-film electronics, and as passivation layers for high power devices. − Orthorhombic REScO 3 (space group D 2 h 16 = Pnma ) are well suited as substrate crystals due to their mechanical and chemical stability in the epitaxy process and an adjustable range of pseudocubic lattice parameters (3.95–4.02 Å). − Large flexoelectric bending at the nanoscale in lanthanide scandates allows construction of nanoscale devices with quite large mechanical motions relative to their size . Besides, YScO 3 and GdScO 3 hosts doping by RE 3+ may be interesting as an active medium for laser application. − …”