Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

Yakovlev, G. E.; Дорохин, М. В.; Зубков, В. И.; Dudin, A. L.; Zdoroveyshchev, A. V.; Малышева, Е. И.; Danilov, Yu. A.; Звонков, Б. Н.; Kudrin, A. V.

doi:10.1134/s1063782618080250

Cited by 7 publications

(2 citation statements)

References 26 publications

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“…The bottom inset in Figure 2 presents the concentration profile, measured in wider depth range (up to 100 mm). It is seen that after the QW response, the apparent carrier concentration monotonically decreases according to Debye smearing [11,21] while entering the semiinsulating substrate. The free carrier concentration at the level 10 10 cm −3 registered here is among the best achievements measured in semiconductors by conventional CV or ECV techniques.…”

Section: Ecv Profilingmentioning

confidence: 99%

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Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Ivanova¹,

Yakovlev²,

Зубков³

et al. 2019

Turk J Phys

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We present experimental and theoretical investigations of pHEMT heterostructures with AlGaAs/InGaAs/GaAs quantum wells (QWs) and/or a delta-doped layer, which can be used as active regions in transistors operating in the 4-18 GHz frequency range. Using the electrochemical capacitance-voltage setup ECV Pro we, for the first time, experimentally observed a concentration peak from the near-surface delta layer of the pHEMT structure together with a peak of QW enrichment. The capacitance of the electrolyte-semiconductor contact was measured by Agilent LCR-meter, which was connected to the electrochemical cell of ECV Pro through a specially designed relay module. Using numerical simulation of the electronic characteristics of nanoheterostructures by self-consistent solution of Schrödinger and Poisson equations we determined electrostatic potential profiles for band edges, band offsets, quantum-confinement levels, and concentration profiles of charge carriers for the samples under investigation. The impact of delta-layer position on the confined energy levels and carrier concentration in the QW was experimentally and theoretically analyzed in detail. We determined the optimal distance between the QW and delta layer, which provides the most efficient process of supply of charge carriers to the QW. The conducted work is directed at improvement of SHF devices, allowing one to increase the gain coefficient and transconductance of transistors.

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Section: Ecv Profilingmentioning

confidence: 99%

“…reports on precise ECV profiling of free charge carriers into the depth of pHEMT structures grown on GaAs substrates [10,11].…”

Section: Introductionmentioning

confidence: 99%

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Ivanova¹,

Yakovlev²,

Зубков³

et al. 2019

Turk J Phys

View full text Add to dashboard Cite

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UV laser-induced nanostructured porous oxide in GaAs crystals

Salimon

Averchenko

Lipovskikh

et al. 2022

Solid State Sciences

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Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Zou

et al. 2020

ACS Appl. Mater. Interfaces

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As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump—THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.

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Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

Cited by 7 publications

References 26 publications

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

Emission processes of the interaction between the quantum well and donor deltalayer in heterostructures for pHEMTs

UV laser-induced nanostructured porous oxide in GaAs crystals

Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

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