Specific Features of Temperature Dependence of Graphene Oxide Resistance

Babaev, A. A.; Zobov, M. E.; Kornilov, D. Yu.; Tkachev, S. V.; Теруков, Е. И.; Левицкий, В. С.

doi:10.1134/s2070205119010052

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…There were some differences on the values of this parameter for all the GOF devices, which could be associated with the GOF fabrication processes, considering variations in the sizes of the GO samples and differences in the distances between the electrical contacts. It was also observed that as temperature decreases, the electrical resistance of the GOF prototypes increases, as expected in a semiconductor material, as reported by Muchharla 45 et al, and Babaev et al 66 . The inset in Fig.…”

Section: Resultssupporting

confidence: 77%

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Sánchez-Trujillo

Osorio-Maldonado

Prías‐Barragán

2023

Sci Rep

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The rapid development of optoelectronic applications for optical-to-electrical conversion has increased the interest in graphene oxide material. Here, graphene oxide films (GOF) were used as source material in an infrared photodetector configuration and the temperature dependence of the electrical conductivity was studied. GOF were prepared by the double-thermal decomposition (DTD) method at 973 K, with a fixed carbonization temperature, in a pyrolysis system, under a controlled nitrogen atmosphere, over quartz substrates. Graphene oxide films were mechanically supported in a photodetector configuration on Bakelite substrates and electrically contacted with copper wires and high-purity silver paint. Morphological images from the GOF’s surface were taken employing a scanning electron microscope and observed a homogeneous surface which favored the electrical contacts deposition. Vibrational characteristics were studied employing Raman spectroscopy and determined the typical graphene oxide bands. GOF were used to discuss the effect of temperature on the film’s electrical conductivity. Current–voltage (I–V) curves were taken for several temperatures varying from 20 to 300 K and the electrical resistance values were obtained from 142.86 to 2.14 kΩ. The GOF electrical conductivity and bandgap energy (Eg) were calculated, and it was found that when increasing temperature, the electrical conductivity increased from 30.33 to 2023.97 S/m, similar to a semiconductor material, and Eg shows a nonlinear change from 0.33 to 0.12 eV, with the increasing temperature. Conduction mechanism was described mainly by three-dimensional variable range hopping (3D VRH). Additionally, measurements of voltage and electrical resistance, as a function of wavelength were considered, for a spectral range between 1300 and 3000 nm. It was evidenced that as the wavelength becomes longer, a greater number of free electrons are generated, which contributes to the electrical current. The external quantum efficiency (EQE) was determined for this proposed photodetector prototype, obtaining a value of 40%, similar to those reported for commercial semiconductor photodetectors. This study provides a groundwork for further development of graphene oxide films with high conductivity in large-scale preparation.

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Section: Resultssupporting

confidence: 77%

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Sánchez-Trujillo

Osorio-Maldonado

Prías‐Barragán

2023

Sci Rep

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Section: Electrical Characterizationsupporting

confidence: 80%

Temperature Dependence of Electrical Conductivity and Variable Hopping Range Mechanism on Graphene Oxide Films

Sánchez-Trujillo

Osorio-Maldonado

Prías‐Barragán

2022

Preprint

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Rapid development of optoelectronic applications for optical-to-electrical conversion has increased the interest in graphene oxide (GO) material. Here, graphene oxide films (GOF) were used as source material in an infrared photodetector configuration and temperature dependence of the electrical conductivity was studied. GOF were prepared by double-thermal decomposition (DTD) method at 973 K, as fixed carbonization temperature (TCA), in a pyrolysis system, under a controlled nitrogen atmosphere, over quartz substrates. Graphene oxide films were mechanically supported in a photodetector configuration on bakelite substrates and electrically contacted with copper wires and high-purity silver paint. Vibrational characteristics were studied employing Raman spectroscopy and it was determined the typical graphene oxide bands. GOF were used to discuss the effect of temperature on the film’s electrical conductivity. Current-voltage (IV) curves were taken for several temperatures varying from 20 to 300 K and the electrical resistance values were obtained from 142.86 to 2.14 kΩ. The GOF electrical conductivity and bandgap energy (Eg) were calculated and it was found that when increasing temperature, the electrical conductivity increased from 30.33 to 2023.97 S/m, similar to a semiconductor material, and Eg shows a nonlinear change from 0.33 to 0.12 eV, with the increasing temperature. Conduction mechanism was described mainly by 3D-variable range hopping. Aditionally, measurements of voltage and electrical resistance, as a function of wavelength were considered, for a spectral range between 1300 nm and 3000 nm. It was evidenced that as the wavelength becomes longer, a greater number of free electrons are generated, which contribute to the electrical current. The EQE was determined for this proposed photodetector prototype, obtaining a value of 40%, similar to those reported for commercial semiconductor photodetectors. This study provides a groundwork for further development of graphene oxide films with high conductivity in large-scale preparation.

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“…36 The resistance of GO decreases, and conductivity increases with temperature. 37 The higher the conductivity, the faster the electron migration rate, and hydrolysis is a chemical reaction in which electrons are lost. Therefore, this may result in a larger max HGR for Al/Bi/GO than for Al/Bi/CNT at relatively high temperatures.…”

Section: Hydrogen Generation Of the Al-based Composites With Watermentioning

confidence: 99%

Study on synergistic hydrogen generation from aluminum-based composites in different forms of water

Chen,

Lu,

Zhang

et al. 2024

Phys. Chem. Chem. Phys.

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Specific Features of Temperature Dependence of Graphene Oxide Resistance

Cited by 3 publications

References 31 publications

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Temperature dependence of electrical conductivity and variable hopping range mechanism on graphene oxide films

Temperature Dependence of Electrical Conductivity and Variable Hopping Range Mechanism on Graphene Oxide Films

Study on synergistic hydrogen generation from aluminum-based composites in different forms of water

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