Specific Features of Matching of a Lower Electrode and an RF Bias Generator for Reactive Ion Etching of Bulk Substrates

Poletayev, S. D.; Lyubimov, A. I.

doi:10.1134/s1063784221040150

Cited by 2 publications

(6 citation statements)

References 10 publications

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“…The diagram of the modeled system is shown in Fig. 1 in [14]. A specialized coil (inductor) generates and sustains plasma under a gas pressure of 0.01−10 Pa.…”

Section: Modelingmentioning

confidence: 99%

“…The mask thickness is 40 nm. The substrate holder, which has already been examined in [14], is a metal frame that covers all faces of the substrate except for the working one. Calculations were performed using the Frequency−Transient software module at time point t = 1 ms when plasma is steady-state.…”

Section: Modelingmentioning

confidence: 99%

“…Calculations were performed using the Frequency−Transient software module at time point t = 1 ms when plasma is steady-state. The chamber design and the domain properties are in exact accordance with [14].…”

Section: Modelingmentioning

confidence: 99%

“…The simulation in [14] was performed for a substrate with a diameter of 120 mm and a thickness of 15 mm positioned on the lower electrode. However, it turned out to be impossible in the present study to obtain a solution in the symmetric mode for such a substrate and a metal mask covering > 30% of its diameter due to an increasing divergence in calculations.…”

Section: Modelingmentioning

confidence: 99%

“…However, the influence of dimensional parameters of substrates on matching of a high-frequency generator (HFG) with the lower electrode is neglected in current models. Simulations in COMSOL multiphysics performed in [14] revealed that an increase in the surface area and thickness of a substrate translates into a considerable enhancement of specific reactive power, which, in turn, implies an increase in the power reflection coefficient at the lower electrode connected to an HFG. The results of these simulations were verified experimentally.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

Poletayev

Lyubimov²

2022

Semiconductors

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The effect of the degree of asymmetry in the arrangement of metal masks on the matching of the lower electrode with a high-frequency displacement generator during selective reactive-ion etching of massive substrates in plasma-forming gas mixtures based on freon-14 is studied theoretically and experimentally. Theoretically, the absence of the influence of the asymmetry of the mask location on the specific reactive power is shown. It is shown that at the edge of the substrate, especially with a mask, there is a sharp increase in the RF current density, which proves mainly the surface (end) nature of its flow. The influence of the mask location on the behavior of the electric charge density, which correlates with the distribution of the RF current density in the near-surface layer of the substrate, is established. No redistribution of the charge density of the chemically active plasma particles at the edge of the mask was detected. In accordance with the theoretical results obtained, it is experimentally shown that metal masks with a side length ratio of 36/0 mm reduce the power reflection coefficient within 5%. Keywords: diffractive optical element, reactive ion etching, inductively coupled plasma, contact mask, lower electrode, simulation Multiphysics.

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“…The diagram of the modeled system is shown in Fig. 1 in [14]. A specialized coil (inductor) generates and sustains plasma under a gas pressure of 0.01−10 Pa.…”

Section: Modelingmentioning

confidence: 99%

Section: Modelingmentioning

confidence: 99%

Section: Modelingmentioning

confidence: 99%

Section: Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

Poletayev

Lyubimov²

2022

Semiconductors

View full text Add to dashboard Cite

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The Influence of Metal Masks on Matching of the Lower Electrode and a High-Frequency Bias Generator at Reactive Ion Etching of Large Substrates

Poletayev

Lyubimov²

2021

Tech. Phys. Lett.

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The influence of metal masks on matching of the lower electrode and a high-frequency bias generator at selective reactive ion mask etching of large substrates in Freon-14 has been investigated both theoretically and experimentally. It is shown for masks with a coating of substrates of more than 30% that the reactive power component increases at distances from the center that are close to the substrate radius. It is established that the specific reactive power is independent of the thickness and type of metal masks. It is shown experimentally that masks with any substrate-coating coefficient of practical importance connected to the lower electrode via a substrate holder improve matching by decreasing the power reflectance.

show abstract

Specific Features of Matching of a Lower Electrode and an RF Bias Generator for Reactive Ion Etching of Bulk Substrates

Cited by 2 publications

References 10 publications

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

The Influence of Metal Masks on Matching of the Lower Electrode and a High-Frequency Bias Generator at Reactive Ion Etching of Large Substrates

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