Specific features of intervalley scattering of charge carriers in n-Si at high temperatures

Fedosov, A. V.; Luniov, S. V.; Fedosov, S. A.

doi:10.1134/s1063782610100039

Cited by 10 publications

(8 citation statements)

References 3 publications

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“…The intervalley scattering of electrons on optical phonons is described by the scalar relaxation time [29]. As shown in research [26], intervalley scattering in the silicon is caused by the interaction of electrons with optical phonons at characteristic temperatures T C1 =190 K and T C2 =630 K. The constants of the optical deformation potential for these phonons and were found in the studies. The values of the constants of the acoustic deformation potential and eV are given in work [30].…”

Section: Theoretical Calculationsmentioning

confidence: 73%

“…1). Reduction of the Hall mobility with the increasing temperature is due to the increasing role of electron scattering on optical phonons, which are responsible for the intervalley scattering of electrons in silicon [26]. Detailed investigations of the tensoresistence of n-Si at uniaxial pressure along the crystallographic direction [111] showed that resistivity increased along with a decrease in the electron mobility by increasing the effective mass of electrons at transformation of a two-axis isoenergetic ellipsoid of rotation in the three axes [27].…”

Section: Resultsmentioning

confidence: 99%

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Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of piezo-Hall effect measurements. From the analysis of these dependencies it follows that under the uniaxial pressure (0–0.42) GPa and (0–0.37) GPa along crystallographic directions [100] and [111], respectively, the deformation-induced increase of the Hall mobility has been observed. On the basis of the proposed theoretical model of mobility, this increase is explained by the decrease of the amplitude of a large-scale potential with an increase in the magnitude of uniaxial deformation and, accordingly, the probability of electron scattering on this potential. The slight discrepancy between the obtained experimental results and the relevant theoretical calculations at the low temperatures is due to the fact that the electron scattering on the radiation defects, created by the electron radiation, was not taken into account in the calculations. The decrease in Hall mobility of electrons along with an increase in temperature for unirradiated and irradiated silicon single crystals is explained by the growth of the probability of electron scattering on the optical phonons that are responsible for the intervalley scattering in silicon. The obtained results can be used in designing and modelling on the basis of n-Si single crystals of various electronic devices of micro- and nanoelectronics, which can be subject to the extreme conditions of action of the significant radiation and deformation fields.

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Section: Theoretical Calculationsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 99%

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Luniov

Lyshuk

Maslyuk

et al. 2019

Latvian Journal of Physics and Technical Sciences

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“…In Fig. , the qualitative similarity of the solid (1, 2) and dashed (1′, 2′) curves in the range of Т > 200–250 K (both obtained during the strong deformation and in its absence) indicates that changes of the interminimum scattering of charge carriers under deformation scarcely influence on the formation of the thermoelectromotive forces in these conditions. This allows using not only the generally accepted expression for the anisotropy parameter of mobility

K = \frac{μ_{⊥}}{μ_{| |}} = \frac{3}{2} \frac{ρ_{\infty}^{true〈 001 true〉}}{ρ_{0}} - \frac{1}{2},

but also the expression for the anisotropy parameter of drag thermo‐emf

M = \frac{α_{| |}^{ph}}{α_{⊥}^{ph}} = \frac{2 K}{true(2 K + 1 true) \frac{α_{0}^{ph}}{α_{\infty}^{ph}} - 1} = \frac{2 K}{true(2 K + 1 true) \frac{α_{0} - α_{(6)}^{normale}}{α_{\infty} - α_{(2)}^{normale}} - 1},

experimentally measured in conditions that do not lead to the change in the total concentration of charge carriers in the conduction band.…”

Section: Temperature Dependence Of the Anisotropy Parameter Of Drag Tmentioning

confidence: 78%

Thermoelectric characteristics of uniaxially deformed n‐Si in the temperature range 85–355 K

Гайдар

Баранский

2016

Physica Status Solidi (b)

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Phone: þ380 445 255 959, Fax: þ380 445 258 342The temperature dependences of thermoelectromotive force (thermo-emf), tenso-thermo-emf (at XkrTk 001 ½ , X ¼ 1.2 GPa), thermo-emf anisotropy Da ¼ a ph jj À a ph ? , anisotropy parameter of drag thermo-emf M ¼ a ph jj =a ph ? and thermoelectric figure of merit Z a of n-SihPi crystals with charge carrier concentration n e % 1:75 Â 10 14 cm À3 were investigated in the temperature range 85 K T 355 K. It was found that with increasing temperature the anisotropy parameter of drag thermo-emf M decreases 2.4-fold, and the anisotropy parameter of mobility K, 2.3-fold. It is shown that the anisotropy parameter of drag thermo-emf M decreases with temperature much slower than thermo-emf anisotropy Da. It is also shown that within the entire temperature range, the thermo-emf anisotropy Da exceeds the thermo-emf anisotropy, typical for the conventional thermoelectric anisotropic materials in the absence of deformation.

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“…Исследованию влияния одноосной упругой деформации на электрофизические свойства в полупроводниках посвящен ряд работ [5][6][7]. Но в литературе имеется мало сведений об особенностях тензостимулированного эффекта изменения удельного сопротивления при наличии глубоких энергетических уровней в запрещенной зоне и термодефектов в объеме полупроводника.…”

Section: Introductionunclassified

Тензостимулированный Эффект В Легированном И Термообработанном Кремнии При Ориентированной Деформации

Маматкаримов¹,

Khimmatkulov²,

Tursunov³

2021

Физика Твердого Тела

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The tensostimulated effect in heat-treated and doped silicon was investigated. It is shown that uniaxial compression in the [111] direction leads to the decay of thermal donors and the hysteresis development in the dependences of the resistivity on the compression value. It was found that the strain-stimulated effect in manganese-compensated silicon samples is due to simultaneous changes in the concentration and mobility of current carriers.

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Specific features of intervalley scattering of charge carriers in n-Si at high temperatures

Cited by 10 publications

References 3 publications

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects

Thermoelectric characteristics of uniaxially deformed n‐Si in the temperature range 85–355 K

Тензостимулированный Эффект В Легированном И Термообработанном Кремнии При Ориентированной Деформации

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