Speciation of BC x N y films grown by PECVD with trimethylborazine precursor

Baake, Olaf; Hoffmann, P.; Klein, Andreas; Pollakowski, B.; Beckhoff, Burkhard; Косинова, М. Л.; Файнер, Н. И.; Sulyaeva, V. S.; Трунова, В. А.; Ensinger, Wolfgang

doi:10.1007/s00216-009-3056-6

Cited by 15 publications

(21 citation statements)

References 39 publications

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“…In the combined LPCVD and PECVD apparatus, eight samples (three without NH 3 and five with NH 3 ) were prepared from TMAB, eight samples (three without NH 3 and five with NH 3 ) were prepared from TEAB, and four samples (three without NH 3 and one with NH 3 ) were prepared from TMB . The sizes of the samples were about 10 × 20 mm 2 .…”

Section: Resultsmentioning

confidence: 99%

“…For a third set of experiments, the single‐source precursor TMB was employed for the plasma‐enhanced CVD (PECVD) procedure at a temperature of 400 °C …”

Section: Methodsmentioning

confidence: 99%

“…The introduction of molecules containing all the elements necessary to produce ternary compounds (boron, carbon, and nitrogen) has to be considered as a fundamental improvement of the synthesis. In our study, BC x N y layers were produced by chemical vapor deposition (CVD) processes using, as single‐source precursors, trimethylamine borane (TMAB), triethylamine borane (TEAB), and trimethylborazine (TMB) …”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the preparation of single‐phase h‐BCN compounds is a great challenge in view of the difficulty to synthesize controlled compositions . Only few authors provide stoichiometric formulas for the new compounds …”

Section: Introductionmentioning

confidence: 99%

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Chemical bonds and elemental compositions of BC_xN_y layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

et al. 2012

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BCxNy films were produced from single‐source precursors in a chemical vapor deposition process. The boranes were introduced as precursors at low pressure conditions and at a temperature of 700 °C, whereas the borazine was handled at 400 °C and with a plasma enhancement at an electrical power input of 40 W. Additionally, as inert or reactive gases, H2, He, N2, and NH3, respectively, were used. The films deposited on Si(100) substrates were chemically characterized by X‐ray photoelectron spectroscopy and by synchrotron radiation‐based total‐reflection X‐ray fluorescence combined with near‐edge X‐ray absorption fine structure and quantified elementally by energy‐dispersive X‐ray spectroscopy. The results are critically compared. With the application of boranes without NH3, compounds with a dominating carbidic character were identified, whereas with the addition of NH3 to the boranes, a nitridic character was prevalent. In case of using borazine for the synthesis, the nitridic character was found at the application of all auxiliary gases. For both groups stoichiometric formulas derived from energy‐dispersive X‐ray spectroscopy are proposed: B3.5–4C4N2–2.5 for the carbidic region and B3.5C1.5N5 for the nitridic region. Copyright © 2012 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 99%

“…For a third set of experiments, the single‐source precursor TMB was employed for the plasma‐enhanced CVD (PECVD) procedure at a temperature of 400 °C …”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Chemical bonds and elemental compositions of BC_xN_y layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

et al. 2012

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“…Nanoindentation Young's modulus and hardness as a function of N 2 /(N 2 +Ar) gas ratio for BCN films sputter deposited using B 4 28 Tsai et.al. have also reported similar microhardness values of 1-3 GPa for cathodic arc plasma deposited BCN films.…”

Section: Hardness (Gpa)mentioning

confidence: 99%

Investigation of the Dielectric and Mechanical Properties for Magnetron Sputtered BCN Thin Films

Prakash

Todi

Sundaram

et al. 2014

ECS J. Solid State Sci. Technol.

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Boron carbon nitride (BCN) thin films were deposited by a dual target DC and RF sputtering technique. The films were deposited using various combinations of nitrogen and argon working gases and B 4 C, BN, and C targets. X-ray photoelectron spectroscopy and Fourier-transform infra-red spectroscopy were utilized, respectively, to investigate the changes in chemical composition and bonding that occurred for films deposited under various N 2 /Ar gas flow ratios and DC/RF target powers. The composition and bonding were correlated to separate measurements of the BCN mass density, dielectric constant, Young's modulus, and hardness. All BCN films were observed to have relatively low mass densities ranging from 2.0-2.5 g/cm 3 . BN rich BCN films were observed to be insulating with relatively low dielectric constants of 3.9-4.6 and Young's modulus and hardness values of 110-150 GPa and 5-13 GPa, respectively. BC rich BCN films were observed to be comparatively leaky dielectrics but did exhibit extreme mechanical properties with Young's modulus and hardness values exceeding in some cases 300 GPa and 30 GPa, respectively. Nanoelectronic metal interconnects have many unique nanoscale electrical, thermal, and mechanical challenges.1-3 While dimensional scaling has produced tremendous improvements in transistor performance, 4 it has produced an opposite effect on the associated metal interconnect leading to increased critical path signal delays and possible degradation of the overall integrated circuit performance.5 As the interconnect signal delays are proportional both to the resistance of the interconnect metal and the capacitance of the insulating interlayer dielectric (ILD), new materials with reduced values of resistivity and dielectric permittivity have been sought to mitigate the negative effects of dimensional scaling.5 Since relatively few materials exhibit a lower resistivity compared to the currently utilized interconnect metal copper (Cu), most materials based interconnect delay reduction efforts have focused on implementing new ILD materials with increasingly lower values of dielectric constant (i.e. low-k).6 Unfortunately, the hybrid inorganic-organic silicate (a-SiOC:H) materials currently utilized as low-k ILDs exhibit reduced electrical, thermal and mechanical properties in addition to reduced values of dielectric permittivity.5-7 These overall reduced properties have severely aggravated a variety of interconnect related reliability issues such as time dependent dielectric breakdown and die cracking during packaging. 2,3Compounds in the boron-carbon-nitrogen phase diagram (such as diamond (C), cubic boron nitride (c-BN), and boron carbide (B 4 C)) are potentially attractive as alternative low-k dielectric materials due to their covalent bonding, short bond lengths, and low atomic mass that leads to a unique combination of low dielectric constant but high thermal and mechanical strength. [8][9][10][11][12] Some of the already prominently reported properties for these materials include good wear resistance, hig...

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Analytical characterization of BCxNy films generated by LPCVD with triethylamine borane

et al. 2010

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Triethylamine borane (TEAB) and He, N(2) or NH(3) were applied as additional reaction gases in the production of BC(x)N(y) layers by low-pressure chemical vapor deposition (LPCVD). These layers were deposited on Si(100) wafers and characterized chemically by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation-based total-reflection X-ray fluorescence analysis combined with near-edge X-ray absorption fine-structure spectroscopy (TXRF-NEXAFS). The composition of the material produced without NH(3) was found to be dominated by B-C bonds with the stoichiometric formula B(2)C(3)N. B-N bonds with the formula B(2)CN(3) were preferred when NH(3) was added. A first attempt was made to compare the results obtained by applying trimethylamine borane and TEAB as single-source precursors.

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Speciation of BC x N y films grown by PECVD with trimethylborazine precursor

Cited by 15 publications

References 39 publications

Chemical bonds and elemental compositions of BC_xN_y layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

Chemical bonds and elemental compositions of BC_xN_y layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

Investigation of the Dielectric and Mechanical Properties for Magnetron Sputtered BCN Thin Films

Analytical characterization of BCxNy films generated by LPCVD with triethylamine borane

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Speciation of BC x N y films grown by PECVD with trimethylborazine precursor

Cited by 15 publications

References 39 publications

Chemical bonds and elemental compositions of BCxNy layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

Chemical bonds and elemental compositions of BCxNy layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

Investigation of the Dielectric and Mechanical Properties for Magnetron Sputtered BCN Thin Films

Analytical characterization of BCxNy films generated by LPCVD with triethylamine borane

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Product

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Chemical bonds and elemental compositions of BC_xN_y layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine

Chemical bonds and elemental compositions of BC_xN_y layers produced by chemical vapor deposition with trimethylamine borane, triethylamine borane, or trimethylborazine