Special Technique for Growing Tl₄S₃, Anisotropy of Electrical Conduction and Photophysical Properties

Abstract

Single crystals of Tl4S3 were prepared by using a special local technique and the obtained crystals were analyzed by X-ray diffraction. The electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity for the resultant crystals were elucidated in this work. The electrical measurements extend from 170 to 430 K. σ⊥ = 4.263 × 10-6 (Ω cm)-1 when current flow direction makes a right angle to the cleavage plane of the crystals, but σ∥ = 1.034 × 10-6 (Ω cm)-1 when the current flow is parallel to the cleavage plane. The width of the band gap is calculated using the electrical conductivity and Hall Effect measurements, and the values are discussed. The anisotropy of the electrical conductivity (σ⊥/σ∥) in the Tl4S3 single crystals was also studied in this work. Finally, the photosensitivity was calculated for different levels of illumination. The results of the photoconductivity study showed that the recombination process in Tl4S3 single crystals is monomolecular.

Characteristics of Optical and Photoconductive Properties in Bulk and Thin Film of TlS2Single Crystals

“…They reported that the binding energies of the Tl 5d 5/2 and Tl 5d 3/2 core levels for Tl 2 S crystal are 15.55 and 13.36 eV, respectively. The electrical properties of Tl 2 S and TlS single crystals have also been reported in this investigation, the same studies for Tl 4 S 3 have been recorded in our paper [8]. The optical absorption studies of Tl 2 S have been investigated by Estrella et al [9] and suggest that there are direct forbidden transitions with a band gap of 1.12 eV.…”

“…Starting materials were placed in an evacuated (10 −6 Torr) silica tube. Thereafter, the silica tube was fixed in a suitable set inside the furnace tube of the Lenton thermal design (LTD) technique [8]. Crystals of TlS 2 were obtained via cooling rate of 3…”

Spectral photoelectronic features of TlInSe2single crystals

“…A three-zone furnace that is the tube furnace of a special design known as the Lenton thermal design (LTD) technique [13] was implemented for growing single crystals of the TlInSe 2 compound. The technique includes digital temperature controllers (eurotherm 91e-type), which were used to control the temperature profile inside the tube furnace of this design.…”

Impacts of Temperature and Frequency on the Dielectric Properties for Insight into the Nature of the Charge Transports in the Tl2S Layered Single Crystals

“…Layered single crystals of the Tl 2 S semi-conducting compound was obtained via a new technique based on the Lenton Thermal Design (LTD), which is well described in Ref. [19]. The technique was provided with three digital temperature controllers (eurotherm 91e-type) that were used to control the temperature profile inside the tube furnace of this design.…”