Special pure germanium-rich Ga-Ge-As-Se glasses for active mid-IR fiber optics

Shiryaev, V.S.; Karaksina, E.V.; Чурбанов, М. Ф.; Kotereva, Т.V.; Stepanov, B.S.; Ketkova, L.А.; Evdokimov, I.I.; Колташев, В. В.; Плотниченко, В. Г.; Filatov, A.I.; Антонов, И. Н.

doi:10.1016/j.materresbull.2018.08.009

Cited by 31 publications

(8 citation statements)

References 31 publications

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“…2a), showing some absorption bands in ~2-4 μm range caused by the atmospheric contaminations (water vapor and CO 2 , on the first hand), weak impurity absorption line at ~4.5 μm due to Se-H vibrations [28], and a broad ~8-11 μm absorption feature of complex origin. The latter includes contributions from oxygen-containing impurity complexes (P-O, Ge-O) [28,29], as well as possible intrinsic absorption from mixed P-Ga-Ge environment [30]. The apparent longwave shift of multiphonon cut-off is due to a substitution of P by heavier Bi in the composition.…”

Section: Resultsmentioning

confidence: 99%

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Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

Golovchak

Seage

Szlęzak

et al. 2020

Journal of Alloys and Compounds

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Novel P-containing bulk Bi x Ga 5 Ge 20 P 10-x Se 45 Te 20 glasses have been successfully fabricated and studied with optical spectroscopy and differential scanning calorimetry. Non-isothermal and isothermal crystallization kinetics are investigated, and anti-Arrhenius behavior is observed for the crystallization of some phases in x = 1 glass. The thermal stability of the glass is shown to decrease with an increase in Bi concentration, whereas as the concentration of P increases, the glass stability increases and the glass does not crystallize during regular DSC heating scans. It is found that substitution of P with Bi in glass composition leads to a decrease in the optical gap and increase in its density.

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Section: Resultsmentioning

confidence: 99%

“…Corresponding values of the same parameters determined for isocompositional Bi x Ga 5 Ge 20 Sb 10-x Se 45 Te 20 glasses [23] are given in square brackets for comparison. Average activation energy of crystallization E a calculated for the investigated materials using Ozawa's plots[28,29].…”

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confidence: 99%

Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

Golovchak

Seage

Szlęzak

et al. 2020

Journal of Alloys and Compounds

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“…In recent years, this special class of material, so-called chalcogenides has significantly dominated the field of semiconductors and been the primary choice because of their multifunctional behavior. Moreover, this material exhibits impressive optical properties such as a wide transparency window, a high photosensitivity, and a low phonon energy. − Because of these extraordinary qualities, it has wide applications in optical fibers, photovoltaic devices, xerography, and detectors. , Chalcogenide materials are used in optoelectronics and show significant transmission in near- and far-infrared spectral regions.…”

Section: Introductionmentioning

confidence: 99%

“…1−3 Because of these extraordinary qualities, it has wide applications in optical fibers, photovoltaic devices, xerography, and detectors. 4,5 Chalcogenide materials are used in optoelectronics and show significant transmission in near-and farinfrared spectral regions.…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Das¹,

Senapati²,

Alagarasan

et al. 2022

ACS Appl. Opt. Mater.

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This work focuses on the structural, optical, and morphological modifications in As 20 Ag 10 Te 10 Se 60 quaternary thin films that are ∼800 nm thick upon thermal annealing at different temperatures. The structure is analyzed by Xray diffraction that reveals the phase transformation (amorphous to crystalline) due to annealing. This material's phase transition enables it to be used in memory device applications. The increase in particle size is confirmed by field emission scanning electron microscopy of the surface. The increase in particle size signifies the agglomeration occurs at higher annealing temperatures. The optical transmittance shows a red shift toward a lower photon energy as recorded by the ultraviolet−visible spectrometer. The optical bandgap of the films decreases (1.84 to 1.72 eV), whereas the refractive index increases as calculated from the Swanepoel method. The decrease in the bandgap is attributed to the increases in the localized states. The amorphous to crystalline transition results in a significant increase in the third-order nonlinear susceptibility (from 4.524 × 10 −11 to 14.146 × 10 −11 esu). The nonlinear refractive index is found to increase from 5.385 × 10 −10 to 14.786 × 10 −10 esu upon annealing. The static and high-frequency dielectric constant increases with the increase in oscillator and dispersion energy. The observed changes are explained on the basis of phase transformation and the density of defect states. The enhanced value of the nonlinear refractive index with a reduced optical electronegativity and carrier concentration with annealing is useful for nonlinear optical devices.

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“…Due to good sensor-specific advantages in comparison with the crystalline phase, these chalcogenide glasses play an excellent role in the implementation of sensor arrays, and show higher chemical durability, easier shape, and stability over time, making them advantageous for sensor applications. [6][7][8] Ge-Se glasses have a low absorption coefficient and a large transmission range that makes them useful for mid-infrared devices. As a third element, we have chosen tellurium (Te) because of its low loss, i.e.…”

Section: Introductionmentioning

confidence: 99%

Development of an Impedance-Based Electrical Humidity Sensor Using Sb-Doped Ge-Se-Te Chalcogenide Glasses

Mishra

Lohia

Chaudhary

et al. 2020

Journal of Elec Materi

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The present paper demonstrates the effect of humidity on the (Ge 11.5 Te 12.5-Se 67.5) 80 Sb 20 and (Ge 11.5 Te 12.5 Se 67.5) 70 Sb 30 thin film deposited on a glass substrate. The films prepared using a thermal evaporation technique reveal an amorphous nature as observed from the x-ray diffraction (XRD) graph. The light absorption taking place in the UV-visible region was confirmed using a UV-Vis spectrophotometer, and optical bandgap values of 1.46 eV and 1.42 eV were found for (Ge 11.5 Te 12.5 Se 67.5) 80 Sb 20 and (Ge 11.5 Te 12.5 Se 67.5) 70 Sb 30 alloys using Tauc's plot. The films were investigated for an impedance-based electrical humidity sensor. The maximum sensitivity of the chalcogenide sensing element was 13.86 MX/%RH and 15.31 MX/%RH for (Ge 11.5 Te 12.5 Se 67.5) 80 Sb 20 and (Ge 11.5 Te 12.5 Se 67.5) 70 Sb 30 , respectively, in the range 10-25%RH at room temperature, and the average sensitivity for the entire range of %RH was 7.33 MX/%RH and 9.42 MX/%RH, respectively, for the two glasses. The aging effect for samples was found to be negligible; hence they are stable against time, which makes them suitable for use as humidity sensors. The repeatability of the sensors was 89% and 94.45%, respectively.

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Special pure germanium-rich Ga-Ge-As-Se glasses for active mid-IR fiber optics

Cited by 31 publications

References 31 publications

Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications

Development of an Impedance-Based Electrical Humidity Sensor Using Sb-Doped Ge-Se-Te Chalcogenide Glasses

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Special pure germanium-rich Ga-Ge-As-Se glasses for active mid-IR fiber optics

Cited by 31 publications

References 31 publications

Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

Effect of P/Bi substitution on optical and thermal properties of Ga-Ge-Se-Te glasses

Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As20Ag10Te10Se60 Thin Films for Optical Applications

Development of an Impedance-Based Electrical Humidity Sensor Using Sb-Doped Ge-Se-Te Chalcogenide Glasses

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Thermal Annealing-Induced Transformation of Structural, Morphological, Linear, and Nonlinear Optical Parameters of Quaternary As₂₀Ag₁₀Te₁₀Se₆₀ Thin Films for Optical Applications