Special issue on numerical modelling of low‐temperature plasmas for various applications — part II: Research papers on numerical modelling for various plasma applications

Abstract

We present here part II of the special issue on "Numerical Modelling of Low-temperature Plasmas for Various Applications", which was divided in two parts, with each part organized as a double issue. The first double issue contained review and tutorial papers on the various modelling approaches and closely related topics, like model verification and validation, plasma-surface interaction modelling and input data for modelling. [1] In the present double issue, we give illustrations of the different modelling approaches for various applications.Low-temperature plasmas are extensively used for microelectronic applications. The two main plasma sources used for this purpose are inductively coupled plasmas (ICP) and capacitively coupled plasmas (CCP). This special issue contains a number of papers describing these two different plasma sources. Wen and colleagues from Dalian University of Technology, University of California and University of Antwerp apply a global (i.e., volume-averaged) bulk plasma model, coupled bi-directionally with a Monte Carlo (MC)/ fluid sheath model for an ICP operating in Ar/O 2 gas mixtures. [2] The model calculates the ion energy and angular distribution functions bombarding the rf-biased electrode for different bias voltages, pressures and coil powers. Mouchtouris and Kokkoris (National Center for Scientific Research (NCSR) "Demokritos" in Attica) present a multi-scale model for a low pressure ICP in Ar, based on a reactor scale model for describing the plasma behaviour, a MC particle tracing model to calculate the ion energy and angular distributions, and a MC surface model to calculate the evolution of surface morphology during the etching of a polymeric substrate. [3] This model allows linking the operating parameters of the plasma reactor with the evolution of the surface roughness. Stratakos, Zeniou and Gogolides, also working at NCSR "Demokritos", perform a full-wave three-dimensional electromagnetic analysis in vacuum to calculate and compare the electric/magnetic field components of different helical and helicon antennas used to generate ICPs. [4] This is important to select the appropriate antenna type for a plasma source.Large scale CCPs, operating at high frequencies, are studied by Eremin, Brinkmann and Mussenbrock (Ruhr-University

The kINPen—a review on physics and chemistry of the atmospheric pressure plasma jet and its applications

“…Global models. Model calculations and plasma simulation have led to insights into many plasma processes and have progressed plasma applications considerably [195,196]. Detailed models using particle-in-cell Monte Carlo techniques are rare (see e.g.…”

An asymptotic preserving well-balanced scheme for the isothermal fluid equations in low-temperature plasma applications

“…The physical conditions where they occur are particularly diverse: pressures varying from below a millitorr to few hundred atmospheres, different excitation methods (e.g., inductively coupled plasma (ICP), capacitively coupled plasma (CCP), dielectric barrier discharge (DBD), magnetron), diverse geometries, and power ranges (see, e.g., [1,2]). For that reason, a number of different descriptions are used for their study, from kinetic approaches, e.g., Particle-In-Cell/Monte Carlo Collision (PIC-MCC) and Direct Simulation Monte Carlo (DSMC) method, to fluid and global models (see [3,4] for a review on the modeling and numerical approaches of low-temperature plasmas).…”