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Groß, Herbert; Zügge, Hannfried; Peschka, Martin; Blechinger, Fritz

doi:10.1002/9783527699254.ch6

Handbook of Optical Systems 2006

DOI: 10.1002/9783527699254.ch6

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Herbert Groß¹,

Hannfried Zügge²,

Martin Peschka³

et al.

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2012

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“…The numerical calculation also reveals that the novel threemirror design satisfies the Mare ´chal criterion 18) for diffraction-limited imaging over a large field of view (160 m in diameter in the sample plane).…”

mentioning

confidence: 79%

At-Wavelength Extreme Ultraviolet Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors

Toyoda

Yamasoe

Hatano

et al. 2012

Appl. Phys. Express

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Motivated by the need for at-wavelength observation of extreme ultraviolet (EUV) lithography masks, we developed a full-field EUV microscope that has a multilayer-mirror objective. This objective is based on an innovative optical design that gives a magnification of over ×1400, enabling us to use a conventional charge-coupled device (CCD) camera as the detector. In addition, when the objective is corrected for off-axis aberrations, it has a large field of view of a few hundred micrometers, permitting rapid inspection of a whole mask. We demonstrate this novel design by presenting at-wavelength images of a mask.

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mentioning

confidence: 79%

At-Wavelength Extreme Ultraviolet Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors

Toyoda

Yamasoe

Hatano

et al. 2012

Appl. Phys. Express

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Cited by 1 publication

References 144 publications

At-Wavelength Extreme Ultraviolet Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors

At-Wavelength Extreme Ultraviolet Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors

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