2015
DOI: 10.1063/1.4920993
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Spatio-temporal behavior of microwave sheath-voltage combination plasma source

Abstract: Microwave sheath-Voltage combination Plasma (MVP) is a high density plasma source and can be used as a suitable plasma processing device (e.g., ionized physical vapor deposition). In the present report, the temporal behavior of an argon MVP sustained along a direct-current biased Ti rod is investigated. Two plasma modes are observed, one is an "oxidized state" (OS) at the early time of the microwave plasma and the other is "ionized sputter state" (ISS) at the later times. Transition of the plasma from OS to IS… Show more

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Cited by 2 publications
(1 citation statement)
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“…The major feature of SWP is that discharges can be established over a wide pressure range (∼10 −3 -10 3 Pa) by electromagnetic surface waves excited at plasma-dielectric interfaces without electrodes and magnetic fields; [59][60][61][62][63][64] in SWPs, the microwaves penetrate into the plasma along the interfaces even in the overdense mode to heat plasma electrons in a thin (a few mm thick or less) skin-depth layer. The present configuration of SWP source equipped with a rod antenna on the axis was originally developed for plasma materials processing, [65][66][67][68] being applied to etching of large-diameter substrates (using additionally multipole magnetic fields), 66 to coating of inner and/or outer surfaces of small-diameter metal tubes, [69][70][71] and further to the microplasma thruster; [50][51][52][53][54][55][56][57][58] in practice, it has an advantage in efficient plasma generation even in a limited, small space through surface waves excited at annular plasmadielectric interfaces around the rod antenna on the axis.…”
Section: Introductionmentioning
confidence: 99%
“…The major feature of SWP is that discharges can be established over a wide pressure range (∼10 −3 -10 3 Pa) by electromagnetic surface waves excited at plasma-dielectric interfaces without electrodes and magnetic fields; [59][60][61][62][63][64] in SWPs, the microwaves penetrate into the plasma along the interfaces even in the overdense mode to heat plasma electrons in a thin (a few mm thick or less) skin-depth layer. The present configuration of SWP source equipped with a rod antenna on the axis was originally developed for plasma materials processing, [65][66][67][68] being applied to etching of large-diameter substrates (using additionally multipole magnetic fields), 66 to coating of inner and/or outer surfaces of small-diameter metal tubes, [69][70][71] and further to the microplasma thruster; [50][51][52][53][54][55][56][57][58] in practice, it has an advantage in efficient plasma generation even in a limited, small space through surface waves excited at annular plasmadielectric interfaces around the rod antenna on the axis.…”
Section: Introductionmentioning
confidence: 99%