Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

Onomitsu, Koji; Fukui, Hideo; Maeda, Takashi; Hirayama, Y.; Horíkoshi, Yoshiji

doi:10.1016/j.jcrysgro.2004.12.095

Cited by 10 publications

(4 citation statements)

References 14 publications

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“…On the other hand Mn ions in the interstitial positions and Ga anti-sites, which are typical defects generated in LT MBE growth GaMnAs, act as donors that reduce holes concentration in the valence band, and hence decrease the Curie temperature (T c ) [4]. Co-doping with Be, which is an effective acceptor nowadays is often used for increasing of the real hole concentrations and enhancement of magnetic properties in GaMnAs epilayers [5,6].…”

Section: Introductionmentioning

confidence: 99%

Anisotropy of magnetoresistance in Be Co-doped GaMnAs

Parchinskiy

Sekar

et al. 2009

Journal of Magnetism and Magnetic Materials

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Section: Introductionmentioning

confidence: 99%

Anisotropy of magnetoresistance in Be Co-doped GaMnAs

Parchinskiy

Sekar

et al. 2009

Journal of Magnetism and Magnetic Materials

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“…Another approach to obtaining higher Curie temperatures is to increase hole concentration by additional p-type doping. We have demonstrated the co-doping in uniform 13) and spatially separated 14) structures by introducing Be, which is conventionally used for p-type dopants in GaAs. Magnetic properties are improved by employing the spatially separated doping technique since hole concentration is successfully increased by additional Be without the formation of Mn-Be complex defects.…”

Section: Introductionmentioning

confidence: 99%

Magnetic Properties of Multiply Mn δ-Doped GaAs

Kawaharazuka

Yanagisawa

Takeuchi

et al. 2009

Jpn. J. Appl. Phys.

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We introduce a spectral transform for the finite relativistic Toda lattice (RTL) in generalized form. In the nonrelativistic case, Moser constructed a spectral transform from the spectral theory of symmetric Jacobi matrices. Here we use a non-symmetric generalized eigenvalue problem for a pair of bidiagonal matrices (L, M) to define the spectral transform for the RTL. The inverse spectral transform is described in terms of a terminating T -fraction. The generalized eigenvalues are constants of motion and the auxiliary spectral data have explicit time evolution. Using the connection with the theory of Laurent orthogonal polynomials, we study the long-time behaviour of the RTL. As in the case of the Toda lattice the matrix entries have asymptotic limits. We show that L tends to an upper Hessenberg matrix with the generalized eigenvalues sorted on the diagonal, while M tends to the identity matrix. e p n h(q n−1 − q n )h(q n − q n+1 ),

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“…[12][13][14] Codoping of Be increases hole concentration; on the other hand, it also increases Mn interstitial defects. 12) Mg is also known to be an acceptor and is well used as a dopant in semiconductor materials, such as GaAs 15) and GaMnN.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs

Yu¹,

Gao²,

Parchinskiy³

et al. 2008

Korean. J. Mater. Res.

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Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

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Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

Cited by 10 publications

References 14 publications

Anisotropy of magnetoresistance in Be Co-doped GaMnAs

Anisotropy of magnetoresistance in Be Co-doped GaMnAs

Magnetic Properties of Multiply Mn δ-Doped GaAs

The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs

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