Spatially resolved Raman and cathodoluminescence probes in electronic materials: Basics and applications

Abstract

Spatially resolved spectroscopy of both Raman and cathodoluminescence (CL) emissions represent a quite powerful characterization method in electronics. In this paper, the underlying physics that dictates the different characteristics of Raman and CL probes is revisited, deepened, and further interpreted in order to clarify how the different nature of those probes enables one bringing about different sets of complementary information. Furthermore, it is inquired into the causes for which data collected by the two different spectroscopic methods on the same material or device may, at a first glance, appear inconsistent to each other and, for some aspects, contradictory. Such differences and contradictions are then shown to disappear once the different nature of the two probes, especially with respect to their spatial response and morphology, is clarified and properly taken into account. Emphasis is finally placed on quantitatively describing the spatial response of Raman and CL probes and to apply such knowledge to elucidate the behavior of electronic materials. The two types of light emission are described according to a common formalism, which details their respective probe response functions in the three‐dimensional space. Practical applications of Raman and CL spectroscopy to resolve highly graded fields of crystal orientation and elastic stress/strain in paradigm electronic materials are finally shown and compared.

Bioinertness and fracture toughness evaluation of the monoclinic zirconia surface film of Oxinium™ femoral head by Raman and cathodoluminescence spectroscopy

“…6. The spectral convolutive algorithm can be set, as follows (Atkinson and Jain, 1999;Lipkin and Clarke, 1995;Pezzotti, 2011): where Δω l ðr ′ 0 ; z 0 Þ ¼ ω l ðr ′ 0 ; z 0 ÞÀω 0;l is the frequency shift observed for the l-th Raman band at each location of the geometrical center of the Raman probe with respected to the frequency recorded at an unperturbed location far away from the indentation crack, ω 0;l ðzÞ; I l;c ðzÞ and ω l;c ðzÞ are the deconvoluted profiles of Raman intensity and frequency shift along the thickness of the oxide scale for the l-th Raman band; and, the threedimensional response function for the Raman probe is given as:…”

Observation of strain effect on the suspended graphene by polarized Raman spectroscopy

“…These factors also affect graphene's phonon modes, and therefore, Raman spectroscopy is a useful method to reflect the variation of the properties [ 20 - 22 ]. In addition, Raman spectroscopy can be employed to determine strain, which modifies the characteristic of materials, such as band structure, and thus influences the performance of corresponding devices [ 23 - 25 ]. Recently, several groups study strain of graphene by artificially bending or stretching the film and then measuring the corresponding Raman spectra [ 26 - 30 ].…”

Characterization of Domains Reorientation in Multilayer Piezoelectric Ceramic Actuators by Polarized Raman Spectroscopy

“…Recently, Raman spectroscopy becomes attractive to study domains orientation under external fields for in situ , nondestructive, and quantitative analysis . It was found that the intensity of some vibration modes, such as A 1 (TO) and A 1 (LO3), has a linear relationship with the polarization state of PZT.…”

“…[5][6][7] Recently, Raman spectroscopy becomes attractive to study domains orientation under external fields for in situ, nondestructive, and quantitative analysis. 7,8 It was found that the intensity of some vibration modes, such as A 1 (TO) 9 and A 1 (LO3), 10 has a linear relationship with the polarization state of PZT. Besides, the relative intensity of some selected vibration modes, such as A1(TO) and B 1 , 11 E(2TO) and E (3TO + 2LO) + B 1 , 7 also relates to the polarization state.…”

“…Besides, the relative intensity of some selected vibration modes, such as A1(TO) and B 1 , E(2TO) and E(3TO + 2LO) + B 1 , also relates to the polarization state. G. Pezzotti group has performed extensive theoretical analysis on characterizing domains reorientation using Raman spectroscopy based on Raman selection rules, and analyzed domains reorientation in PZT ceramics and BaTiO 3 single crystal by introducing a Vickers indentation. However, quantitative analysis of domains reorientation and the induced local stress under electric and/or mechanical fields using Raman spectroscopy is still not well studied.…”