Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

Shen, Jie; Song, Youngshin; Lee, Minjoo Larry; Cha, J J

doi:10.1088/0957-4484/25/46/465702

Cited by 3 publications

(3 citation statements)

References 37 publications

(67 reference statements)

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“…Outside the QD area, the concentrations of As and Sb decrease rapidly, while the P level reaches the level of the initial GaP substrate. Since only small As-P intermixing between GaP and the QDs is expected [63], we assume that all phosphorus is bound in GaP, and therefore the concentration of Ga can be divided into Ga concentration in GaP C GaP and in the QD area C QD Ga as…”

Section: Sample Fabrication and Structural Characterizationmentioning

confidence: 99%

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

et al. 2019

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The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Γ and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k · p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

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Section: Sample Fabrication and Structural Characterizationmentioning

confidence: 99%

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

et al. 2019

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“…(In,Ga)As/GaP QDs lasing was even recently reported on GaP substrate by Heidemann et al [25]. Meanwhile, structural properties of these QDs were investigated at a large scale in terms of size and density [20,[26][27][28] and at the atomic scale through transmission electron microscopy (TEM), planview, and cross-sectional scanning tunneling microscopy (STM) [29][30][31][32], revealing a complex and inhomogeneous indium incorporation behavior inside the QDs. Fukami et al first noticed in their pioneering works the vicinity of the conduction band minimum in the QD and the X valley of GaP with a simple model-solid theory approach [33].…”

Section: Introductionmentioning

confidence: 91%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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“…However, compared with growth on III-V substrates, relatively little is known about the atomic structure and stoichiometry of III-V nanostructures for laser devices grown on silicon substrates. 13,14 Cross-sectional scanning tunneling microscopy (XSTM) is a powerful method to investigate the structural details of III-V nanostructures, e.g., size, shape, and stoichiometry, grown on different III-V substrates. [15][16][17] A clean crosssectional III/V{110} surface for XSTM investigations can easily be prepared by cleaving the III-V(001) substrate in an ultrahigh-vacuum (UHV) chamber.…”

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confidence: 99%

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

Schulze

Huang

Prohl

et al. 2016

Applied Physics Letters

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The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology. V

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Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems

Cited by 3 publications

References 37 publications

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

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