Spatially Resolved Cathodoluminescence Study of Semi‐Insulating GaAs Substrates

Chin, A. K.; Neida, A. R. Von; Caruso, R.

doi:10.1149/1.2123548

Cited by 43 publications

(9 citation statements)

References 5 publications

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“…The cathodoluminescence signal shows excellent correlation to the structure revealed in the topograph. The dislocations are clustered in cell walls,, leaving almost dis]ocation-free cell interior (5,7). The dislocations in cell walls are clearly resolved, as an enlarged portion of the cell structure reproduced in Fig.…”

Section: Methodsmentioning

confidence: 87%

“…The disadvantage of this experimental setup is that it exhibits poor sensitivity, and therefore requires very high primary beam currents and/or low temperature stage to increase the nonradiative lifetime. Recently, silicon photodiodes have been placed inside the chambers of a scanning electron microscope (SEM) to serve as a wavelength integrating detector (4)(5)(6). In this paper, we present an improved detection scheme utilizing a photodiode located in the position usually occupied by a solid-state backscattered electron detector in the SEM.…”

mentioning

confidence: 99%

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A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Marek

Geiss

Glassman

et al. 1985

J. Electrochem. Soc.

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Section: Methodsmentioning

confidence: 87%

mentioning

confidence: 99%

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Marek

Geiss

Glassman

et al. 1985

J. Electrochem. Soc.

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“…The c e l l s t r u c t u r e o f SI-Ga As ingots was revealed by Chin e t a1 [71]. The dislocat i o n observed i n the dark spot contrast, delineated l a r g e regions (…”

Section: Semi-insulating Ga Asmentioning

confidence: 94%

Cathodoluminescence Studies of Dislocations in Semiconductors

Dupuy

1983

J. Phys. Colloques

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Les divers accessoires du microscope à balayage qui permettent de réaliser des analyses en cathodoluminescence de semiconducteurs sont décrits. De brèves notions de spectroscopie sont rappelées. Les contrastes de dislocations sont classés en "usuels" (point noir, point noir et halo brillant) et "non usuels" (absence de contraste, contraste monochromatique brillant). Des exemples d'application récents sont donnés.Abstract: The cathodoluminescence accessories of the scanning electron microscope for semiconductor examinations are described. Brief notions of spectoscopy are recalled. The dislocation contrasts are classified as "usual" (black dot, dot and halo) and "unusual" (no contrast, white contrast on monochromatic image). Examples of recent applications are given.

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“…We see that some slow TDs are attracted to TD super structures resembling sub-grain boundaries previously noted in bulk GaAs wafers. 55 We also see the sporadic appearance of new TDs and TD-pairs throughout the excitation process either from existing TDs (which do not appear to be initially clustered) or appear into existence from CL-invisible sources deeper in the metamorphic buffer. Such sources and reaction events respectively increase and decrease dislocation density by a small amount (<5%) and will be discussed in a subsequent study.…”

Section: Prospects For Dislocation Filteringmentioning

confidence: 85%

Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering

Hughes

Shah

Mukherjee

2019

Journal of Applied Physics

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III-V optoelectronics grown epitaxially on Si substrates have large networks of dislocations due to a lattice constant mismatch between the device layers and the substrate. Recombination-enhanced dislocation glide (REDG) allows these dislocations to move and increase in length during device operation, which degrades performance. In this paper, we study REDG dynamics of threading dislocations in situ in (In)AlGaAs double heterostructures grown on Si substrates using scanning electron microscopy cathodoluminescence. The driving force for REDG arises due to coefficient of thermal expansion differences between Si and the III-V layers leading to large residual strains in the films. Tracking of threading dislocations as moving dark spot defects reveals glide characteristics that vary based on the nature of the dislocation. Remarkably, the alloying of a few atom percent of indium using metamorphic structures arrests threading dislocation glide by more than two orders of magnitude. Finally, we present REDG-based filtering as a pathway to reducing the threading dislocation density in select areas, removing a large fraction of the mobile dislocations. Together, these techniques will enable the understanding of dislocation-dislocation and carrier-dislocation interactions that have so far remained elusive during device operation, leading to reliable III-V integrated optoelectronics on silicon.

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Spatially Resolved Cathodoluminescence Study of Semi‐Insulating GaAs Substrates

Abstract: not Available.

Cited by 43 publications

References 5 publications

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Cathodoluminescence Studies of Dislocations in Semiconductors

Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering

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