Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Li, Tiantian; Mao, Dun; Petrone, Nicholas; Grassi, Robert; Hu, Hao; Ding, Yunhong; Huang, Zhihong; Lo, G. Q.; Hone, James; Low, Tony; Wong, Chee Wei; Gu, Tingyi

doi:10.1038/s41699-018-0080-4

Cited by 32 publications

(40 citation statements)

References 63 publications

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“…The channel may undergo a reversible soft breakdown in such devices. Avalanche devices are useful specifically in weak light detection-such as a single photon detector [46,47].…”

Section: Avalanche Photodetectors (Apd)mentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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“…The channel may undergo a reversible soft breakdown in such devices. Avalanche devices are useful specifically in weak light detection-such as a single photon detector [46,47].…”

Section: Avalanche Photodetectors (Apd)mentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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“…However, the responsivity performance of these high-speed graphene waveguide photodetectors still needs improvements when the low bias voltages are applied in case of large dark currents. For example, the graphene waveguide photodetectors utilizing the photovoltaic (PV) effect [23][24][25][26][27][28][29] , the photo-thermoelectric (PTE) effect [30][31][32][33][34] , or the internal photoemission effect (IPE) 35 usually have limited responsivities (<78 mA/W at zero bias 30 , and <170 mA/W @ <0.4 V 32 ).…”

Section: Introductionmentioning

confidence: 99%

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

et al. 2020

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A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphenemetal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 μm, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S 11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 μm with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 μm. The measured responsivity is about 0.4 A/W under a bias voltage of −0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 μm.

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“…Later, silicon-BP hybrid waveguide PDs were realized for the wavelength band of 2 μm, as illustrated in Fig. 3j achieved even at 40 GHz 122 . In order to achieve an improved responsivity, a metal-G-Si PD was reported with an interesting configuration, in which a graphene sheet was introduced to work with a conventional metal-Si Schottky PD, as shown in Fig.…”

Section: Metal-2dm-metal Pdsmentioning

confidence: 99%

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

et al. 2021

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Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

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Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode

Cited by 32 publications

References 63 publications

Optoelectronic and photonic devices based on transition metal dichalcogenides

Optoelectronic and photonic devices based on transition metal dichalcogenides

High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

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