Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon

Erokhin, Yu. N.; Hong, Feng; Pramanick, S.; Rozgonyi, G. A.; Patnaik, B.; White, C.W.

doi:10.1063/1.110214

Cited by 18 publications

(4 citation statements)

References 13 publications

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“…This could indicate that the silicide is disconnected or agglomerated [4], [7]. In full conversion at metal-consumption ratios of less than 150%, the resistivity of the silicide is almost the same as that of NiSi 2 [13]. Even if partial conversion was used, the resistivity of the silicide was close to that of NiSi 2 at metal-consumption ratios from 80% to 100%.…”

Section: B Enhancing Resistivity On Narrow Active Linementioning

confidence: 64%

Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio

Futase

Kamino

Hashikawa

et al. 2010

2010 IEEE International Reliability Physics Symposium

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We applied partial conversion as initial silicidation to control the morphologies of Ni-Pt silicide, viz., the thickness, crystal grain, and Pt concentration of the Ni-Pt silicide. This partial conversion kept the thickness of Ni-Pt silicide constant regardless of the device pattern, i.e., by controlling silicidation with thermal diffusion. The key to partially converting Ni-Pt silicide was leaving a thick Ni-Pt alloy on the silicide, viz., a low metal-consumption ratio, at the narrow active line. This process made the crystal grain finer and enriched the Pt of Ni-Pt silicide, thereby suppressing the increase in resistivity in Ni-Pt silicide.

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Section: B Enhancing Resistivity On Narrow Active Linementioning

confidence: 64%

Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio

Futase

Kamino

Hashikawa

et al. 2010

2010 IEEE International Reliability Physics Symposium

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“…This approach is based on the phenomenon where the reaction of Ni with amorphous silicon resulting in formation of the targeted phase of nickel silicide occurs at temperatures lower than that required for crystalline silicon [4]. Such an approach enables improvement of the planarity (morphology) of the interface between nickel silicide and silicon thereby improving silicide sheet resistance and widening the temperature window prior to silicide converting to the higher resistivity NiSi2 phase [5]. PAl when combined with carbon co-implant at -100 °e further improves the interface morphology since the reduced EOR damage and the additional trapping of remaining silicon interstitials by carbon further suppressing NiSi agglomeration and formation of NiSi silicide piping defects [6].…”

Section: B Contact Resistancementioning

confidence: 98%

Device scaling and performance improvement: Advances in ion implantation and annealing technologies as enabling drivers

Erokhin

2012

2012 12th International Workshop on Junction Technology

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The complexity of ion implant applications in IC fabrication has grown significantly since becoming the preferred process for doping semiconductors. Aggressive device scaling over the last decade raised unique challenges. This resulted in the invention of novel implant applications to address device scaling driven issues and the development of new generations of ion implanters. These newly developed tools are capable of delivering a wide variety of ion beams of traditional doping and non-doping species, with manufacturing worthy beam currents over an energy range extending from 200 eV to several MeV. They are capable of controlling implanted wafer temperature down to cryogenic conditions to take full advantage of new defect engineering approaches. All these innovations resulted in significant growth of ion implantation steps in advanced IC manufacturing for both doping and Precision Materials Modification (PMM). In this paper we present an overview of recent advances in ion implantation technologies and applications addressing sub-20nm device and process integration challenges. We illustrate how these innovations enable improvement of device performance and expansion of process margins through novel capabilities of ion implantation tools coupled with innovative materials engineering approaches for junction formation and for process modules beyond of traditional doping applications.

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“…Currently, amorphous silicon thin film transistors (a-Si TFTs) are used as the pixel switching elements in flat panel displays 1,2) (FPDs). However, the low carrier mobility restricts the applicability of a-Si TFTs to advanced electric systems such as system-on-panels [3][4][5][6][7][8] (SOPs). Hence, the high-performance polycrystalline silicon (poly-Si) technology is an alternative to the a-Si technology.…”

Section: Introductionmentioning

confidence: 99%

Highly Uniform Polycrystalline Silicon Thin Films Fabricated by Metal Plate Energy-Assisted Agent Method

Lin

Chen

Lee

et al. 2008

jjap

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We investigate two randomly frusuated ID or quasi-ID Ising systems with diluted disorder. namely the ferromagnetic chain in a random field and the ladder spin glass. We present an analytical study of the susceptibilities (linear x . nonlinear x g , and higher orders), which characterize the response to a uniform external field at finite temperature. Both models admit a continuum description in the scaling regime of low tempemre and low impurity concentration, where the susceptibilities obey power laws, similarly to usual crihcal phenomena, albeit unlike the man-field theory of spin glasses. We obtain explicit expressions for the scaling functions of x and x 3 , and an estimate for the essential Lee-Yang singuluty. $ 4379 4380The coefficients xZ-, are the susceptibilities of the model. The linear suscepribility x , which characterizes the linear response of the system, can be expressed as the following sum of the connected two-point correlation function in zero field: E Amic nnd J M Luck whereas the nonlinenr susceptibility x3 can be expressed as a sum of the four-point correlations of the spins, and so on for the higher-order susceptibilities xu-, .Exactly solvable one-dimensional (ID) disordered magnetic systems provide interesting test cases. In spite of the absence of a finite-temperature phase transition, frustration is responsible for the existence of numerous almost-degenerate states, yielding a rich low-temperature behaviour in thermodynamical quantities and correlation functions. The ferromagnetic king chain in a quenched random magnetic field is certainly the simplest of these model systems. It has been the subject of many investigations, based on the observation that its free energy is the Lyapunov exponent of an infinite product of random 2 x 2 transfer matrices (see [4,5] for reviews). Its thermodynamical properties at finite temperature are known exactly only for some classes of distributions of the quenched random fields, either discrete [6] or continuous [7-91. Some results are also available for more general distributions of disorder, either at zero temperature [lo], or in the weakdisorder regime [11][12][13]. The two-point correlation function and the linear susceptibility x are only known in a limited number of cases [4,6,14], whereas virtually nothing is known about higher-order correlations and susceptibilities. The converse situation of an king chain with random exchange couplings is not frustrated, but the ladder geometry, i.e. two chains coupled by transversal exchange couplings, is frustrated, and thus provides an interesting spin-glass model [IO. 151.The purpose of the present article is a detailed study of the higher-order susceptibilities of ID disordered magnetic models, and particularly a comparison of their scaling behaviour with the cases of common critical phenomena and of the mean-field theory of spin glasses. The analytical investigation of the susceptibilities is performed on the ID disordered king models mentioned above, namely the ferromagnetic chain in a random magnetic fiel...

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Spatially confined nickel disilicide formation at 400 °C on ion implantation preamorphized silicon

Cited by 18 publications

References 13 publications

Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio

Pattern-independent, fine-morphology Ni-Pt silicide formation by partial conversion with low metal-consumption ratio

Device scaling and performance improvement: Advances in ion implantation and annealing technologies as enabling drivers

Highly Uniform Polycrystalline Silicon Thin Films Fabricated by Metal Plate Energy-Assisted Agent Method

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