Spatial variation of wear and electrical properties across wrinkles in chemical vapour deposition graphene

Vasić, Borislav; Zurutuza, Amaia; Gajić, Radoš

doi:10.1016/j.carbon.2016.02.066

Cited by 95 publications

(86 citation statements)

References 54 publications

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“…Although it is unclear why wrinkles are weak, 37 one possible reason is the presence of defects along the wrinkles. Graphene with defects is well-known to be mechanically weaker than pristine graphene.…”

Section: Nano Lettersmentioning

confidence: 99%

Single-Layer Graphene Membranes Withstand Ultrahigh Applied Pressure

et al. 2017

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High mechanical strength is essential for pressure-driven membrane separations with nanoporous single-layer graphene, but its ability to withstand high pressures remains to be demonstrated. We monitored failure of centimeter-scale single-layer graphene membranes on porous supports subjected to high pressures. Consistent with theory, the membranes were found to withstand higher pressures when placed on porous supports with smaller pore diameters, but failure occurred over a surprisingly broad range of pressures, attributed to heterogeneous susceptibility to failure at wrinkles, defects, and slack in the suspended graphene. Remarkably, nonwrinkled areas withstood pressure exceeding 100 bar at which many kinds of membrane suffer from compaction. Our study shows that single-layer graphene membranes can sustain ultrahigh pressure especially if the effect of wrinkles is isolated using supports with small pores and suggests the potential for the use of single-layer graphene in high-pressure membrane separations.

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Section: Nano Lettersmentioning

confidence: 99%

Single-Layer Graphene Membranes Withstand Ultrahigh Applied Pressure

et al. 2017

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“…AFM based nanoindentation and force-distance measurements were 15 employed to study elastic properties of graphene [1,20,21,22] and van der Waals screening [10], while frictional properties [23,24,25,26,27,28] and friction and wear protection [7,29,30] were characterized using the lateral (friction) force microscopy. Strong mechanical interaction between AFM probe and graphene was employed for the graphene patterning based on either static (scratching) 20 [31,32] or dynamic plowing [33].…”

Section: Introductionmentioning

confidence: 99%

“…So far, most of the studies have been devoted to increased 25 sliding friction at step edges of graphite [34, 35,36,37,38,39,40,41,42], MoS 2 [37] and NaCl [37,43] due to a Schwoebel-Ehrlich barrier at steps. The lateral force was applied by AFM probes going across graphene edges in order to study bending properties of functionalized graphene islands [44] and few-layer graphene sheets [45], and to investigate elastic properties of graphene [46] as 30 …”

Section: Introductionmentioning

confidence: 99%

Wear properties of graphene edges probed by atomic force microscopy based lateral manipulation

Vasić

Matković

Gajić

et al. 2016

Carbon

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“…A ≈30% reduction of the current can be observed on the wrinkle with respect to the nearby planar regions. Previous literature studies on the impact of wrinkles on Gr electrical properties have been mostly carried on Gr membranes onto insulating SiO 2 substrates . Zhu et al classified wrinkles commonly observed in monolayer CVD Gr into three main categories, basing on their morphology, i.e., ripples, standing wrinkles, and folded wrinkles.…”

Section: Resultsmentioning

confidence: 99%

“…Previous literature studies on the impact of wrinkles on Gr electrical properties have been mostly carried on Gr membranes onto insulating SiO 2 substrates. [42][43][44] Zhu et al [43] classified wrinkles commonly observed in monolayer CVD Gr into three main categories, basing on their morphology, i.e., ripples, standing wrinkles, and folded wrinkles. These latter are very tall wrinkles collapsed onto the planar surface, thus giving rise to trilayer Gr stripes.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

Giannazzo

Fisichella

Greco

et al. 2017

Physica Status Solidi (a)

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The hot electron transistor (HET) is an unipolar majority carrier vertical device with great potential for high frequency (THz) applications. Recently, graphene (Gr) heterostructures with Nitrides have been considered as a promising material system to implement this device concept, with GaN/AlGaN (or GaN/AlN) working as emitter/emitter‐base barrier and Gr as the ultrathin base enabling ballistic transit of hot electrons. In this work, the main issues related to the fabrication of Gr/Nitrides heterojunctions are discussed. An optimized transfer procedure of large‐area Gr membranes onto AlGaN/GaN grown on Si(111) is illustrated. In particular, a soft O2 plasma pretreatment of the AlGaN surface is found to greatly improve the Gr adhesion, resulting in a reduced cracks density. A nanoscale electrical characterization of the obtained Gr/AlGaN/GaN heterostructures was carried out by conductive atomic force microscopy, to evaluate the effect of typical nanometric corrugations (wrinkles) of the Gr membrane on the current transport. These morphological features introduce resistive contributions both to the lateral current transport in the Gr membrane and to the vertical current injection across the heterojunction. The impact of these results on the relevant electrical parameters (i.e., the base resistance and the emitter‐base injection efficiency) of a HET based on this heterostructure is also discussed.

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Spatial variation of wear and electrical properties across wrinkles in chemical vapour deposition graphene

Cited by 95 publications

References 54 publications

Single-Layer Graphene Membranes Withstand Ultrahigh Applied Pressure

Single-Layer Graphene Membranes Withstand Ultrahigh Applied Pressure

Wear properties of graphene edges probed by atomic force microscopy based lateral manipulation

Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors

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