Spatial Optimization of Modulation Doping in P-I-P QDIPs: Towards Achieving Higher Operating Temperature

In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

“…The excellent correlation existing between the different experimental results of the samples and also their theoretical simulations points toward the accuracy of the obtained results and also affirms the efficacy of our adopted growth strategy. Furthermore, since our proposed growth strategy has been proven to improve both the material properties as well as device response, it can be integrated with other state-of-the-art QDIP architectures and quantum dot based devices 2,42,46 where similar improvements can be expected.…”

“…Self-assembled quantum dots (SAQDs) have served as a major propellant for advances in the field of optoelectronic devices, creating tremendous impact on the performance of lasers, 1 IR detectors, 2 LEDs, 3 etc. The recent emergence of quantum computing and quantum cryptography has further expedited the trend of research over the past decade.…”

“…Self-assembled quantum dots (SAQDs) have served as a major propellant for advances in the field of optoelectronic devices, creating tremendous impact on the performance of lasers, IR detectors, LEDs, etc. The recent emergence of quantum computing and quantum cryptography has further expedited the trend of research over the past decade. , The heteroepitaxial growth by molecular beam epitaxy, particularly by the Stranski–Krastanov (SK) growth mode has facilitated excellent growth of such quantum dots by self-assembly of lattice-mismatched semiconductors. − However, there are certain inherent limitations in the SK growth mode such as nonuniform dot size distribution, the formation of defects and dislocations, etc. − Extensive research has been dedicated to overcome these detriments and also tailor the structural and optical properties of quantum dots in order to extract optimum benefits from them.…”

Modeling And Characterization of Carrier Mobility For Truncated Conical Quantum Dot Infrared Photodetectors

“…Quantum computing and quantum cryptography together warranted the escalating interest in quantum dot technologies [1]. This interest is in turn motivated by the inherent characteristics of the various quantum (well, wire, and dot) to tune the optical and electronic characteristics of various semiconductors making them more suitable for specific applications including thermal imaging, remote sensing, photovoltaics, and infrared photodetectors [2]- [3]. However, quantum dot infrared photodetectors (QDIPs) have particularly gained a significant momentum among modern and well-established infrared (IR) photodetectors including quantum well infrared photodetectors (QWIPs) and mercury-cadmium-telluride photodetectors (HgCdTe) since they have the following potential advantages, they: Retain high 3D carrier confinement of electron wave function, Show high normal photon absorption, Possess low dark current capacity; a major source of detection noise, Operate at high temperatures, Have extended photoexcitation lifetime and Exhibit phonon bottleneck effect [2]- [7] .…”