The following chapter is based on the publication "Real-time imaging of quantum entanglement" [1].As outlined in the previous section, the transfer setup is very flexible in creating two-dimensional transverse spatial mode entanglement. The investigation of such modes and their complex spatial patterns requires a detection scheme with a high spatial resolution. Masking the modal structure (as shown in the previous section) or scanning a single pixel detector enables the detection of spatial structures. However, these schemes come at a certain cost. Masking the beam and thereby measuring its transverse spatial structure needs to be adapted to the specific mode properties that are under investigation. Hence, it is not flexible for use with a larger variety of modes without adapting the shape of the mask (if possible at all). On the contrary, scanning a single pixel detector does not need to be adapted to the measured modal structure. However, the higher the resolution, the less efficient the detection is, which leads to a drastic increase in time consumption.The rapid progress in imaging technologies over recent years has made charged coupled device (CCD) cameras an interesting alternative for the detection of single photons in quantum optics experiments. The available CCD chips have a huge number of pixels, each sensitive to single-photon detection events (either by pre-or post-intensifying the signal). Therefore, the spatial information for investigating the structure is directly accessible with a very high resolution.Electron multiplied CCD cameras have attracted attention recently because of their high quantum efficiencies of more than 90 %. 1 They have been utilized for 1 The quantum efficiencies (QE) given for CCD cameras should not be confused with the detection efficiencies of single-photon detectors, which can be as high as 60-70 % for avalanche photodiodes (APD). The QE for CCD chips is the ratio between incident photons and electrons generated due to the photon impact. It is often called the spectral response because of its wavelength dependence. Compared to APDs, the detection efficiency is lower because not all electrons might be detected. Other effects, such as fill factor of the chip or absorption of the photon at the gate electrodes, have to