2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) 2015
DOI: 10.1109/pvsc.2015.7355686
|View full text |Cite
|
Sign up to set email alerts
|

Spatial characterization of interstitial oxygen and its related defects in Czochralski silicon wafers and ingots: A way to improve the material and device quality

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
1
1
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 3 publications
0
1
0
Order By: Relevance
“…Although it is not harmful, it does can impact the overall performance of chips made by the silicon rods. A new technology called the OXYMAP technology can be used to monitor the oxygen concentration during the Cz process [3].…”
Section: Wafer Growthmentioning
confidence: 99%
“…Although it is not harmful, it does can impact the overall performance of chips made by the silicon rods. A new technology called the OXYMAP technology can be used to monitor the oxygen concentration during the Cz process [3].…”
Section: Wafer Growthmentioning
confidence: 99%