Spatial behavior in a Mott insulator near the voltage-driven resistive transition

Dutta, Arijit; Majumdar, Pinaki

doi:10.1103/physrevb.101.245155

Cited by 5 publications

(3 citation statements)

References 35 publications

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“…Another important generalization is the multi-scale modeling of RS dynamics for Hubbard-type interacting models, which is relevant for RS phenomena in several canonical Mott insulators [33][34][35][36][37]. It is worth noting that complex spin-density wave patterns have been observed in voltage-driven Hubbard model by solving the self-consistent Hartree-Fock equation with NEGF [73][74][75]. However, these works only consider static nonequilibrium solutions of the Hubbard model.…”

Section: (A)mentioning

confidence: 99%

Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model

Chern¹

2021

Preprint

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We study the nonequilibrium dynamics of voltage-induced insulator-to-metal transition in the double-exchange model. By incorporating nonequilibrium Green's function method into large-scale Landau-Lifshitz-Gilbert dynamics simulation, we show that the transition to the low-resistance state is initiated by the nucleation of a thin ferromagnetic conducting layer at the anode. The resultant metal-insulator interface is then driven toward the opposite electrode by the voltage stress, giving rise to a growing metallic region. Once the transformation is completed, the system remains a metastable ferromagnetic metal after the voltage bias is removed. This resistance transition is analogous to the electroforming process in resistive switching phenomena. We further show that the initial transformation kinetics is well described by the Kolmogorov-Avrami-Ishibashi model with an effective dimension dependent on the applied voltage. Implications of our results for resistive switching in lanthanum manganites are also discussed.

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Section: (A)mentioning

confidence: 99%

Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model

Chern¹

2021

Preprint

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“…The recent report on the nanoscale resolution of non-filamentary patterns in Ca 2 RuO 4 16 , however, suggests quite a different non-thermal mechanism, reminiscent of the switching in organic solids 30 in which perpendicular patterns to bias have been observed. The importance of the pattern formation along the bias direction in device geometry has been pointed out by recent theories 31 – 33 . Given the diverse switching phenomena, we limit the scope of this paper to a new switching mechanism in the bulk correlated insulators where the switching is understood as phase transition controlled by the electric field.…”

Section: Introductionmentioning

confidence: 98%

Correlated insulator collapse due to quantum avalanche via in-gap ladder states

et al. 2023

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The significant discrepancy observed between the predicted and experimental switching fields in correlated insulators under a DC electric field far-from-equilibrium necessitates a reevaluation of current microscopic understanding. Here we show that an electron avalanche can occur in the bulk limit of such insulators at arbitrarily small electric field by introducing a generic model of electrons coupled to an inelastic medium of phonons. The quantum avalanche arises by the generation of a ladder of in-gap states, created by a multi-phonon emission process. Hot-phonons in the avalanche trigger a premature and partial collapse of the correlated gap. The phonon spectrum dictates the existence of two-stage versus single-stage switching events which we associate with charge-density-wave and Mott resistive phase transitions, respectively. The behavior of electron and phonon temperatures, as well as the temperature dependence of the threshold fields, demonstrates how a crossover between the thermal and quantum switching scenarios emerges within a unified framework of the quantum avalanche.

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“…the Holstein-Hubbard model [56,57]. For example, self-consistent Hartree-Fock equation combined with NEGF was used to investigate the complex spin-density wave patterns in voltage-driven Hubbard model [58][59][60]. However, a full dynamical modeling of CDW transitions requires further integration with realspace lattice dynamics, which is computationally highly demanding.…”

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confidence: 99%

Nonequilibrium Dynamics of Gating-Induced Resistance Transition in Charge Density Wave Insulators

Zhang¹,

Chern²

2022

Preprint

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We present a comprehensive numerical study of the gating-induced insulator-to-metal transition in the charge density wave (CDW) state of the Holstein model. Large-scale Brownian dynamics method with forces computed from nonequilibrium Green's function method is employed to simulate the spatio-temporal dynamics of the CDW state. We show that a threshold voltage, determined by the energy of the in-gap edge modes, is required to induce the instability of the CDW. A large bias voltage, on the other hand, induces a sudden transition to the metallic state similar to a dielectric breakdown. At intermediate voltages, our extensive simulations show that the transition to the low-resistance state is initiated by the nucleation of a thin conducting layer at the gating electrode. The resultant metal-insulator interface is then swept over the system by the voltage bias, resulting in a growing metallic domain. We further characterize the voltage and temperature dependence of the domain-wall dynamics.

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Spatial behavior in a Mott insulator near the voltage-driven resistive transition

Cited by 5 publications

References 35 publications

Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model

Spatio-temporal dynamics of voltage-induced resistance transition in the double-exchange model

Correlated insulator collapse due to quantum avalanche via in-gap ladder states

Nonequilibrium Dynamics of Gating-Induced Resistance Transition in Charge Density Wave Insulators

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