Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements

Burignat, Stéphane; Plossu, C.; Boivin, P.

doi:10.1016/j.jnoncrysol.2007.01.021

Cited by 1 publication

(1 citation statement)

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“…These phenomena suggest that electrons and holes charging/discharging dynamics are to be considered different. C-V characteristics suggest that hole charging in Ge-ncs is a little bit more important than electron charging; the dissymmetry of the current threshold voltages on I -V characteristics may suggest that electrons and holes are not trapped at the same place in oxide and/or that the distribution of allowed energetical levels in the ncs is not the same for both carriers [13]. The inflection in the I -V characteristic may suggest that for electrons, both layers act as two different quantum wells whereas for holes only one energy level is seen.…”

Section: Current-voltage Measurementsmentioning

confidence: 99%

Retention in metal–oxide–semiconductor structures with two embedded self-aligned Ge-nanocrystal layers

Duguay

Burignat

Kern

et al. 2007

Semicond. Sci. Technol.

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Structural and electrical characterization has been carried out on metal-oxide-semiconductor (MOS) structures with a silicon dioxide (SiO 2 ) layer containing a germanium nanocrystals (Ge-ncs) floating gate. Ge-nc layers were embedded in SiO 2 by ion implantation with subsequent annealing. Structural analysis proved the presence of two self-aligned nanocrystal layers within the SiO 2 host material. The electrical results indicate a strong memory effect due to the presence of a near-interface Ge-nc layer. Few volts memory windows can easily be obtained at relatively low programming voltages (<6 V). For comparison, operating voltages used in current FLASH technology are about 12 V. Despite its promising structural properties, retention times extracted from capacitance measurements and scanning Kelvin microscopy were found to be too low (∼10 5 s) to comply with the non-volatility industry requirements (<10 years required).

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Section: Current-voltage Measurementsmentioning

confidence: 99%