Spark plasma sintering of A6B2O17 (A = Hf, Zr; B = Ta, Nb) high entropy ceramics

Tan, Zhenyu; Xie, Zheyu; Wu, X.; Guo, Jin Yun; Zhu, Wang

doi:10.1016/j.matlet.2022.133381

Cited by 11 publications

(1 citation statement)

References 14 publications

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“…While the dielectric properties of the endmember binary oxide species are well known none are available for A 6 B 2 O 17 permutations in the open literature. Moreover, studies of the A 6 B 2 O 17 phases have predominantly focused on bulk ceramic synthesis [8][9][10][11][15][16][17] and consequently comparatively little is known about their overall physical properties or the opportunities they may present as thin layers. We note the growing interest in the published literature for understanding synthesis and properties of disordered, multi-constituent oxides 18 and emerging electronic materials 19,20 in the thin film regime; these developments collectively provide the impetus for property studies in A 6 B 2 O 17 .…”

Section: Introductionmentioning

confidence: 99%

Dielectric properties of disordered A₆B₂O₁₇ (A = Zr; B = Nb, Ta) phases

Spurling,

Almishal,

Casamento

et al. 2024

J Am Ceram Soc.

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We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase‐homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500°C. Crystal structure, microstructure, chemistry, and dielectric properties are characterized by X‐ray diffraction and reflectivity, atomic force microscopy, X‐ray photoelectron spectroscopy, and capacitance analysis, respectively. We observe relative permittivities approaching 60 and loss tangents <1 × 10−2 across the 103–105 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.

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