2004
DOI: 10.1016/j.electacta.2003.12.062
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Spark assisted chemical engraving in the light of electrochemistry

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Cited by 137 publications
(62 citation statements)
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“…A first linear region (Ohmic region) is observed, followed by a plateau at voltages higher than U lim (typically around 10-12 V), before reaching the critical voltage U crit where the gas film is formed. For more details see, for example, [10].…”
Section: Mechanisms Involved In the Gas Film Formationmentioning
confidence: 99%
“…A first linear region (Ohmic region) is observed, followed by a plateau at voltages higher than U lim (typically around 10-12 V), before reaching the critical voltage U crit where the gas film is formed. For more details see, for example, [10].…”
Section: Mechanisms Involved In the Gas Film Formationmentioning
confidence: 99%
“…The process is compared to EDM using a metal matrix composite as the machining sample. A thermal model to predict the machining depth has been developed [14]. The model provides unsatisfactory results when the machining voltages are less than 25 V. One of the mechanism proposed for the onset of the electrochemical discharges after the critical voltage is based on a valve theory [15].…”
Section: Literature Reviewmentioning
confidence: 99%
“…Kulkarni 16,17 , et al have successfully explained the ECS process investigating the basic discharge mechanism by experimental measurements. A novel technology for micromachining of glass, called spark-assisted chemical engraving (SACE) using ECS 18 is presented. This technology is based on electrochemical discharge phenomena.…”
Section: Literature Surveymentioning
confidence: 99%