Spacer Side-wall Processed 0.15 μm GaN HEMT for Ka-band Application
Lixing Zhang,
Beibei Lv,
Xu Ding
et al.
Abstract:In this paper, we have effectively demonstrated 150 nm-gate-length AlGaN/GaN high electron mobility transistors (HEMTs) on 4-inch SiC substrate. The 150 nm gate-length was accomplished by utilizing traditional I-line stepper photolithography, together with a nitride spacer side-wall. This method offers superior processing efficiency compared to E-beam lithography with high wafer uniformity. The devices processed with this spacer side-wall aided method demonstrated comparable electrical performances as that of … Show more
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