Space Radiation Effects on SiC Power Device Reliability

Lauenstein, Jean-Marie; Casey, Megan C.; Ladbury, Ray; Kim, Hak S.; Phan, Anthony M.; Topper, Alyson D.

doi:10.1109/irps46558.2021.9405180

Cited by 49 publications

(56 citation statements)

References 37 publications

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“…The thickness of the n-drift layer for the tested devices range from 3.7 µm to 14 µm, and are in line with the isotopic and natural devices tested in this work. Similar results also be seen in Figure 2 in [16] were both Schottky barrier diodes (SBD) and junction barrier diodes (JBS) were tested, and in [18] for 3 different Schottky diodes. The data from [17] -including therein also data from [10] and [8] -and from [16] and [18], are compared to the results in this work in Fig.…”

Section: Discussionsupporting

confidence: 80%

“…Similar results also be seen in Figure 2 in [16] were both Schottky barrier diodes (SBD) and junction barrier diodes (JBS) were tested, and in [18] for 3 different Schottky diodes. The data from [17] -including therein also data from [10] and [8] -and from [16] and [18], are compared to the results in this work in Fig. 15.…”

Section: Discussionsupporting

confidence: 80%

“…Based on the measurements, suggested ranges for the SEB threshold are listed in Table IV. These ranges correspond to 26% -35% of the devices' blocking voltage, comparable to values reported in [16]. The 49.0 MeV-cm 2 /mg point is based on measurements with two pristine devices.…”

Section: Sebsupporting

confidence: 79%

“…There are two main observations in this work: first, while the results are comparable for both types of devices, the data may indicate marginally lower thresholds for the isotopic type at 7.7 MeV-cm 2 /mg and 14.5 MeV-cm 2 /mg; secondly, the threshold voltage for leakage current degradation appears to be slightly higher than previously published literature [16], [17].…”

Section: Discussionsupporting

confidence: 53%

“…Figure 1 in [17] shows a leakage current degradation plot for a wide range of rated breakdown voltage (600-1700 V) were all have [8], and Steffens et al [18]. The values are estimated from the plots in [16], [17], and [18]. For [18], the data from UCL and GANIL are used -errorbars are not provided, and it is assumed that the data points corresponds to the onset of leakage current degradation.…”

Section: Discussionmentioning

confidence: 99%

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Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

Røed

Eriksen

Ceccaroli

et al. 2022

IEEE Trans. Nucl. Sci.

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The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower LET. Slightly higher reverse bias threshold values for leakage current degradation was also observed compared to previously published work Index Terms-Schottky diodes, silicon carbide, monoisotopic, heavy ion irradiation, single event effects, single event burnout, leakage current degradation I. INTRODUCTIONS ILICON carbide (SiC) is a wide bandgap semiconductor with favorable material properties for use in power electronics applications. In comparison to silicon, the higher breakdown electric field and thermal conductivity allows SiC devices to operate with higher blocking voltages and at higher temperatures [1], [2]. For SiC power devices such as high voltage Schottky diodes and metal oxide semiconductor field-effect transistors (MOSFETs), the build-up of heat can nevertheless lead to reduced material integrity and decreased device performance. The ability to transport heat is therefore an important factor to consider for further development of SiC devices. Studies have shown that isotopic enriched silicon

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Section: Discussionsupporting

confidence: 80%

Section: Discussionsupporting

confidence: 80%

Section: Sebsupporting

confidence: 79%

Section: Discussionsupporting

confidence: 53%

Section: Discussionmentioning

confidence: 99%

See 3 more Smart Citations

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

Røed

Eriksen

Ceccaroli

et al. 2022

IEEE Trans. Nucl. Sci.

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A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices

Lozano,

Seoane,

Comesaña

et al. 2024

Results in Engineering

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Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

Chiang

Xia

et al. 2023

Journal of Applied Physics

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NiO/Ga2O3 heterojunction rectifiers were exposed to 1 Mrad fluences of Co-60 γ-rays either with or without reverse biases. While there is a small component of Compton electrons (600 keV), generated via the interaction of 1.17 and 1.33 MeV gamma photons with the semiconductor, which in turn can lead to displacement damage, most of the energy is lost to ionization. The effect of the exposure to radiation is a 1000× reduction in forward current and a 100× increase in reverse current in the rectifiers, which is independent of whether the devices were biased during this step. The on–off ratio is also reduced by almost five orders of magnitude. There is a slight reduction in carrier concentration in the Ga2O3 drift region, with an effective carrier removal rate of <4 cm−1. The changes in electrical characteristics are reversible by application of short forward current pulses during repeated measurement of the current–voltage characteristics at room temperature. There are no permanent total ionizing dose effects present in the rectifiers to 1 Mad fluences, which along with their resistance to displacement damage effects indicate that these devices may be well-suited to harsh terrestrial and space radiation applications if appropriate bias sequences are implemented to reverse the radiation-induced changes.

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Space Radiation Effects on SiC Power Device Reliability

Cited by 49 publications

References 37 publications

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation

A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices

Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

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