Space-limited domain annealing of CuI thin films for highly responsive ZnO nanorods based ultraviolet photodetectors

Tan, Bo; Luo, Guangcan; Zhang, Ziling; Jiang, Jing; Guo, Xuxiang; Li, Wei; Zhang, Jingquan; Wang, Wenwu

doi:10.1016/j.mssp.2021.106008

Cited by 23 publications

(7 citation statements)

References 61 publications

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“…In addition, the diode ideality factor (n) and dark saturation current density (Jo) can be extracted from semi-log plot of the I-V curve using the following Shockley ideal diode equation [65,66]: However, the obvious rectifying diode characteristic for ZnO/CuAlO 2 confirms the formation of a p-n junction rather than a Schottky junction. The ZnO/CuAlO 2 heterojunction with the forward current density to the reverse current density ratio is 18 at ±1 V, and is lower than the ratio of 30 at ±1 V for the diode made of ZnO/[CuAlO 2 /Cu-O] (Figure 4b).…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the diode ideality factor (n) and dark saturation current density (J 0 ) can be extracted from semi-log plot of the I-V curve using the following Shockley ideal diode equation [65,66]:…”

Section: Resultsmentioning

confidence: 99%

“…The strength of the space electric field is increased with the increase in reverse bias, resulting in a more efficient separation of the photogenerated carriers. Therefore, the ZnO/[CuAlO 2 /Cu-O] heterojunction can further enhance the electrical properties.In addition, the diode ideality factor (n) and dark saturation current density (J 0 ) can be extracted from semi-log plot of the I-V curve using the following Shockley ideal diode equation[65,66]:…”

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confidence: 99%

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Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu–O with CuAlO2 P-Type Layer

et al. 2023

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CuAlO2 was synthesized by a hydrothermal method, in which the Cu–O dimers were incorporated by simply altering the ratio of the reactants and the temperature. The incorporation process increases the grain size in CuAlO2, and modulates the work function and binding energies for CuAlO2 due to the partial substitution of Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying non-isovalent Cu–O with a CuAlO2 host. Based on the ZnO nanorod arrays (NRs) ultraviolet photodetector, CuAlO2/Cu–O fabricated by the low-cost drop-coating method was used as the p-type hole transport layer. The incorporation of the Cu–O clusters into CuAlO2 lattice to enhance the conductivity of CuAlO2 is an effective way for improving ZnO NRs/CuAlO2 device performance. The photodetectors exhibit significant diode behavior, with a rectification ratio approaching 30 at ±1 V, and a dark saturation current density 0.81 mA cm−2. The responsivity of the ZnO-NRs-based UV photodetector increases from 13.2 to 91.3 mA/W at 0 V bias, with an increase in the detectivity from 2.35 × 1010 to 1.71 × 1011 Jones. Furthermore, the ZnO NRs/[CuAlO2/Cu–O] photodetector exhibits a maximum responsivity of 5002 mA/W at 1.5 V bias under 375 nm UV illumination.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu–O with CuAlO2 P-Type Layer

et al. 2023

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“…Hence, wide-bandgap oxide semiconductor materials, such as Ga 2 O 3 , ZnO, TiO 2 , and SnO 2 , have drawn a lot of attention due to their ultraviolet selective absorption and excellent electronic transport properties. − However, in the process of material growth and device preparation, high temperatures are often needed to improve the crystallinity and ensure the long-term stability of the detector. As for ZnO-based photodetectors, the treatment temperature is usually above 300 °C. − For other oxides, the preparation temperature exceeds 500 °C or even 1000 °C. − High temperature represents an increase in cost and process complexity. Meanwhile, it also limits the application in flexible/wearable electronic devices, so lowering the synthesis temperature has a promoting effect on the actual production.…”

Section: Introductionmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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For traditional wide-bandgap semiconductor materials, a high-temperature process is unavoidable for improving crystallization quality, so the substrate of the device is greatly limited. In this work, zinc–tin oxide (a-ZTO) amorphous oxide processed by the pulsed laser deposition method was utilized as the n-type layer, which exhibits considerable electron mobility and optical transparency, and can be deposited at room temperature. At the same time, by combining p-type CuI grown by the thermal evaporation method, a vertically structured ultraviolet photodetector based on CuI/ZTO heterojunction was obtained. The detector demonstrates self-powered properties, with an on–off ratio exceeding 104, and rapid response with a rise time of 2.36 ms and a fall time of 1.49 ms. Also, the photodetector shows long-term stability with 92% retention after 5000 s cyclic lighting and maintains reproducible response in frequency dependence measurement. Furthermore, the flexible photodetector on poly(ethylene terephthalate) (PET) substrates was constructed, exhibiting fast response and durability in the bending state. This is the first time that the heterostructure based on CuI has been applied in the flexible photodetector. The excellent results indicate that the combination of amorphous oxide and CuI has the potential for ultraviolet photodetectors, and will broaden the application range of high-performance flexible/transparent optoelectronic devices in the future.

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“…8–11 Yet, CuI is far from being fully exploited as a transparent p-type semiconductor and further study is still required toward improved properties and possible applications. So far, CuI has been reported to be integrated with ZnO, 12–16 Ga 2 O 3 , 17,18 TiO 2 , 19,20 IGZO, 21 n type Si (n-Si), 22 etc. to construct CuI-based ultraviolet (UV) photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Transparent p-type CuI film based self-powered ultraviolet photodetectors with ultrahigh speed, responsivity and detectivity

et al. 2022

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Space-limited domain annealing of CuI thin films for highly responsive ZnO nanorods based ultraviolet photodetectors

Cited by 23 publications

References 61 publications

Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu–O with CuAlO2 P-Type Layer

Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu–O with CuAlO2 P-Type Layer

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Transparent p-type CuI film based self-powered ultraviolet photodetectors with ultrahigh speed, responsivity and detectivity

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