Space-charge-limited currents in materials with Gaussian energy distributions of localized states

Архипов, В. И.; Heremans, Paul; Emelianova, E. V.; Adriaenssens, Guy

doi:10.1063/1.1424046

Cited by 57 publications

(35 citation statements)

References 5 publications

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“…Temperature, disorder, applied field, and interface dipoles influence the transport of carriers across a MO interface [32][33][34][35][36][37]. Other variables are sample preparation technique, and time [38].…”

Section: Discussionmentioning

confidence: 99%

Metal–organic interfaces at the nanoscale

et al. 2004

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In this work, we present an investigation of the Ag-PPP (polyparaphenylene) interface using ballistic electron emission microscopy. Our work is the first successful application of the BEEM technique to metal-organic interfaces. We observe nanometer scale injection inhomogeneities. They have an electronic origin, since we find corresponding Schottky barrier variations. We also determine the transmission function of Ag-PPP interface and find that it agrees qualitatively with the theoretical calculations for a metalphenyl ring interface. We conclude that charge transport across inhomogeneous barriers needs to be considered for understanding electronic transport across metal-organic interfaces and organic device characteristics.

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Section: Discussionmentioning

confidence: 99%

Metal–organic interfaces at the nanoscale

et al. 2004

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“…137,138 VRH has been observed in a wide variety of systems such as Si-and Ge-based inorganic semiconductors, 209 conducting polymers and assemblies of quantum dots. 210 The hopping conductivity has been amply studied for bulk amorphous semiconductors 137,138 and organic semiconductors with a Gaussian DOS, 206,207,[211][212][213][214][215][216][217] but these developments have not been generally applied in electrochemistry experiments. Arkhipov, Ba¨ssler and coworkers have reported some models of the electronic conductivity of electrochemically doped polymers.…”

Section: Transport In a Continuous Density Of Statesmentioning

confidence: 99%

Physical electrochemistry of nanostructured devices

Bisquert

2008

Phys. Chem. Chem. Phys.

237

273

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“…7b. Note that the zero-temperature approximation of eqn (6) (that requires that only states below the Ferrmi level are occupied) is invalid in this region in which the majority of carriers do not lie below the Fermi level, but instead, are above the Fermi level, 124 symmetrically distributed around E m , as shown in Fig. 7a.…”

Section: Multiple Trapping In the Gaussian Dosmentioning

confidence: 99%

“…124,125 This model can be considered an extension of the two-level system of section 4.2, by the introduction of disorder in the trap. It is also interesting to discuss this model in detail because it provides a simple view of many features of the hopping model described later.…”

Section: Multiple Trapping In the Gaussian Dosmentioning

confidence: 99%

“…122,123 Even the separate broadened contributions of polarons and bipolarons can be detected in the chemical capacitance. 34 Therefore the next step is to use the multiple trapping model with the Gaussian distribution instead of a single trap level, 124,125 and this will be described in section 6.2. It is also realized that organic conductors normally lack extended states as their inorganic counterparts.…”

Section: General Properties Of the Mobilitymentioning

confidence: 99%

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Interpretation of electron diffusion coefficient in organic and inorganic semiconductors with broad distributions of states

Bisquert

2008

Phys. Chem. Chem. Phys.

182

175

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The carrier transport properties in nanocrystalline semiconductors and organic materials play a key role for modern organic/inorganic devices such as dye-sensitized (DSC) and organic solar cells, organic and hybrid light-emitting diodes (OLEDs), organic field-effect transistors, and electrochemical sensors and displays. Carrier transport in these materials usually occurs by transitions in a broad distribution of localized states. As a result the transport is dominated by thermal activation to a band of extended states (multiple trapping), or if these do not exist, by hopping via localized states. We provide a general view of the physical interpretation of the variations of carrier transport coefficients (diffusion coefficient and mobility) with respect to the carrier concentration, or Fermi level, examining in detail models for carrier transport in nanocrystalline semiconductors and organic materials with the following distributions: single and two-level systems, exponential and Gaussian density of states. We treat both the multiple trapping models and the hopping model in the transport energy approximation. The analysis is simplified by thermodynamic properties: the chemical capacitance, C m , and the thermodynamic factor, w n , that allow us to derive many properties of the chemical diffusion coefficient, D n , used in Fick's law. The formulation of the generalized Einstein relation for the mobility to diffusion ratio shows that the carrier mobility is proportional to the jump diffusion coefficient, D J , that is derived from single particle random walk. Characteristic experimental data for nanocrystalline TiO 2 in DSC and electrochemically doped conducting polymers are discussed in the light of these models.

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Space-charge-limited currents in materials with Gaussian energy distributions of localized states

Cited by 57 publications

References 5 publications

Metal–organic interfaces at the nanoscale

Metal–organic interfaces at the nanoscale

Physical electrochemistry of nanostructured devices

Interpretation of electron diffusion coefficient in organic and inorganic semiconductors with broad distributions of states

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