Space-Charge-Limited Currents in Heteroepitaxial Films of Silicon Grown on Sapphire

Abstract

Experimental results are presented on current-voltage relations in heteroepitaxial silicon films grown on sapphire. Above a threshold voltage a current is observed which is proportional to the square of the applied voltage, but inversely proportional to the square of the distance. It is interpreted as space-charge-limited current. The square law dependence with distance is a deviation from the Mott-Gurney law of space-charge-limited current in solids, which predicts I ∝ L−3, and is a consequence of the electrode configuration.

Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth

“…A gap-type device, which is preferred for SCLC measurements of thin film semiconductors, was fabricated using 200-nm-thick single-crystal CH 3 NH 3 PbI 3 with two 100-μm-gap Au electrodes ( Fig. 4a , inset) 37 38 . Figure 4a presents the dark current–voltage ( I–V ) curve of the single-crystal perovskite.…”

Bulk electrical properties of rubrene single crystals: Measurements and analysis

“…In the first one, the thickness h of the semiconductor is very small ͑h → 0͒, which corresponds to the 2D geometry first analyzed by Geurst 17 and Zuleeg and Knoll. 18 The second case intervenes when the thickness h is higher than the distance between electrodes L; under such circumstances, the current is h dependent and can be described by an equation similar to that originally developed by Mott and Gurney for the 3D ͑sand-wich͒ architecture. 19 In each of these limiting cases, the current I is given by Eqs.…”

Atomistic Surface Passivation of CH 3 NH 3 PbI 3 Perovskite Single Crystals for Highly Sensitive Coplanar-Structure X-Ray Detectors

“…The atomistic surface passivation effect was further evidenced by the significantly reduced surface trap density of SCs with passivation treatment based on the space-charge-limited current (SCLC) measurement as shown in Figure 2(c) . The electron-only devices with the symmetric lateral structure of Cu/BCP/C60/MAPbI 3 SC/C60/BCP/Cu were used for the SCLC measurement with the channel width of 50 μ m. From the I − V curve, we can obtain the trap filling threshold voltage for a gap-type structure by Geurst's SCLC model [ 36 ]: where n t is the surface trap density per unit area, ε 0 is the vacuum permittivity, ε r is the relative dielectric constant of MAPbI 3 which equals to 32, [ 12 ] and L is the gap width. The surface trap density of SC with MAI treatment was suppressed from 1.63 × 10 10 cm ‐2 to 5.68 × 10 9 cm ‐2 and was further reduced to 1.8 × 10 9 cm ‐2 after isopropanol washing.…”