Space-Charge-Limited Current in Neutron-Irradiated Silicon, with Evidence of the Complete Lampert Triangle

Henderson, H. Thurman; Ashley, K. L.

doi:10.1103/physrev.186.811

Cited by 19 publications

(5 citation statements)

References 18 publications

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“…Assuming that the capacitance of material is maintained at a constant value, the conductivity curve follows the trap-free square law at a voltage of V T-Ch ¼ 2V TFL where n e % n to. 26,35 As shown in Fig. 5(a), the ratio of the V T-Ch to V TFL in different temperatures is close to 2, again confirming the validity of the application of the Lampert's model to the film.…”

Section: Resultssupporting

confidence: 79%

See 1 more Smart Citation

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Hejazi

Safari

2011

Journal of Applied Physics

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This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert’s triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child’s trap-free square law suggesting the space charge limited current was the dominant mechanism.

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Section: Resultssupporting

confidence: 79%

“…As the electric field increases, traps are filled with charge carriers causing the Fermi level and, therefore, the leakage current to increase. The threshold voltage for filling up the traps is called TFL voltage, 20,26,27,35 which can be estimated according to Eq. (5), (4)) were governing leakage behavior.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Hejazi

Safari

2011

Journal of Applied Physics

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“…V TFL is derived by the double integration of Poisson's equation. 11) Thus, we can estimate N t from the slope of the V TFL -d 2 plot. Figure 3 shows the relationship between N t calculated from V TFL and the thickness of the GaN layer.…”

mentioning

confidence: 99%

Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors

Hinoki

Kikawa

Yamada

et al. 2007

Appl. Phys. Express

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A channel layer substitution of a wider bandgap AlGaN for conventional GaN in high electron mobility transistors (HEMTs) is one possible method of enhancing the breakdown voltage for higher power operation. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. We utilized a Si ion implantation doping technique to achieve sufficiently low resistive source/drain contacts, and realized the first HEMT operation with an AlGaN channel layer. This result is very promising for the further higher power operation of high-frequency HEMTs.

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“…3,4 The triangle concept dates originally from the 1950's but has seemingly not been applied to this kind of system before, and the formation of the complete Lampert triangle is rarely reported in the literature. 5 Recently, the Lampert triangle was observed in poly (3,4-ethylenedioxythiophene) [PEDOT] devices. 6 Hence, PEDOT is an interesting system among the conducting polymers to investigate the conduction mechanism through the Lampert triangle model.…”

Section: Introductionmentioning

confidence: 99%

“…Semiconducting polymers are low-conductivity solids, and space charge-limited conduction (SCLC) is a notable feature in these materials. , Therefore, the Lampert triangle model based on the simplified one-dimensional theory can be an interesting model to analyze the current density characteristic in these materials. , The triangle concept dates originally from the 1950’s but has seemingly not been applied to this kind of system before, and the formation of the complete Lampert triangle is rarely reported in the literature . Recently, the Lampert triangle was observed in poly(3,4-ethylenedioxythiophene) [PEDOT] devices .…”

Section: Introductionmentioning

confidence: 99%

Evidence of Lampert Triangle and Jonscher’s Double Power Law in Doped Poly(3,4-ethylenedioxythiophene) Devices

et al. 2023

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The Lampert triangle model can be an interesting method for investigating the conduction mechanism in semiconducting polymers. A complete Lampert triangle is observed in PF 6− doped poly (3,4-ethylenedioxythiophene) [PEDOT:PF 6 ] devices, fabricated in a stainless steel/PEDOT/Ag structure and synthesized by electro-polymerization at three different doping levels (high-S1, medium-S2, and low-S3). The temperaturedependent current−voltage characteristics show three distinct regimes limited within a triangular region called the Lampert triangle: Ohmic, trap-limited/filling space charge-limited conduction (TFL-SCLC), and trap-free/trap-filled space chargelimited conduction (TF-SCLC). The vertices of the Lampert triangle represents the transition voltages (V T ) for different conduction mechanisms, and the carrier density (p 0 ), carrier transit time (t t ), and relaxation time (t d ) for different doping levels are estimated through the analysis of the triangle. The mobility of carriers shows significant temperature dependence (Arrhenius type). The Jonscher's double power law fit to AC conductivity data shows that the exponent (in the range 0−1) varies with carrier density and has different trends in bulk and interface. The impedance data and Nyquist plots are analyzed with two parallel RQ circuits (R: resistance; Q: constant phase element) connected in series. The values of onset frequency (ω o ) in the conductivity plot of the different samples (S1, S2, and S3) give insights into their relative disorder. Raman spectroscopy studies have attempted to corroborate the changes in bond deformation with carrier density in correlation with the structure and disorder.

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Space-Charge-Limited Current in Neutron-Irradiated Silicon, with Evidence of the Complete Lampert Triangle

Cited by 19 publications

References 18 publications

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors

Evidence of Lampert Triangle and Jonscher’s Double Power Law in Doped Poly(3,4-ethylenedioxythiophene) Devices

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