2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2022
DOI: 10.1109/ispsd49238.2022.9813686
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Source engineering on Oxygen-Inserted Si channel for gate length scaling of low-voltage switch devices

Yi‐Ann Chen1,
Changsoo Hong2,
Shuyi Li3
et al.
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Simulation of the Functional Characteristics of Low-Voltage Switching Devices, Based on the Example of Automatic Circuit Breakers

Petrov,
Ivanovna Gracheva,
Sinyukova
et al. 2023
2023 International Conference on Clean Electrical Power (ICCEP)
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Simulation of the Functional Characteristics of Low-Voltage Switching Devices, Based on the Example of Automatic Circuit Breakers

Petrov,
Ivanovna Gracheva,
Sinyukova
et al. 2023
2023 International Conference on Clean Electrical Power (ICCEP)
1
0
0
0
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Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel

Takeuchi1,
Mears2,
Hytha3
et al. 2022
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
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Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs

Wong,
Takeuchi,
Mears
2023
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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