Sonochemical preparation of SbSeI gel

Nowak, Marian; Kauch, B.; Szperlich, P.; Jesionek, Marcin; Kępińska, Mirosława; Bober, Ł.; Szala, J.; Moskal, G.; Rzychoń, T.; Stróż, Danuta

doi:10.1016/j.ultsonch.2009.01.003

Cited by 24 publications

(29 citation statements)

References 28 publications

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“…2). During this process the observed SbSeI syneresis was a few times www.intechopen.com larger (Nowak et al, 2009b) than the about 40 % decrease of volume of the dried SbSI ethanogel . It means that the SbSeI ethanogel is much less rigid than the SbSI ethanogel.…”

Section: Sonochemical Preparation Of Photoferroelectric Nanowiresmentioning

confidence: 88%

“…It was found that the SbSI nanocrystals amounts only 4.7 % of volume of the sonicated SbSI xerogel . The surface areas of the sonochemically prepared SbSI and SbSeI were estimated as about 75 m 2 /g and 14÷34 m 2 /g (Nowak et al, 2009b), respectively. Fig.…”

Section: Morphology Composition and Crystal Structure Of Sbsi-type Nmentioning

confidence: 99%

“…3. Typical SEM micrographs of xerogels of SbSI sonochemically prepared in ethanol (a after (Starczewska et al, 2008)) and methanol (b after (Starczewska et al, 2009)) as well as xerogels of SbSeI (c after (Nowak et al, 2009b)) and SbS 0.5 Se 0.5 I (d after (Nowak et al, 2010b)) sonochemically prepared in ethanol…”

Section: Morphology Composition and Crystal Structure Of Sbsi-type Nmentioning

confidence: 99%

“…The SbSeI ethanogel (Nowak et al, 2009b) was composed of nanowires with average lateral dimensions of 20-50 nm. The SbS 1-x Se x I nanowires described in (Nowak et al, 2010b) had lateral dimensions of 10-50 nm.…”

Section: Morphology Composition and Crystal Structure Of Sbsi-type Nmentioning

confidence: 99%

“…Recently, the ultrasound irradiation was applied to induce the 1D growth of nanowires of ternary and quaternary chalcohalides formed from the group 15-16-17 elements. Up to now this sonochemical technique was established for direct preparation of SbSI , SbSeI (Nowak et al 2009b), and SbS 1-x Se x I (Nowak et al 2010b) nanowires. It was also applied for growing SbSI in multi-walled carbon nanotubes (CNTs) (Nowak et al 2009c).…”

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confidence: 99%

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Photoferroelectric Nanowires

Nowak¹

2010

Nanowires Science and Technology

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Section: Sonochemical Preparation Of Photoferroelectric Nanowiresmentioning

confidence: 88%

Section: Morphology Composition and Crystal Structure Of Sbsi-type Nmentioning

confidence: 99%

Section: Morphology Composition and Crystal Structure Of Sbsi-type Nmentioning

confidence: 99%

Section: Morphology Composition and Crystal Structure Of Sbsi-type Nmentioning

confidence: 99%

mentioning

confidence: 99%

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Photoferroelectric Nanowires

Nowak¹

2010

Nanowires Science and Technology

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1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Peng

Zhang

et al. 2018

Advcd Theory and Sims

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Mechanical exfoliation of 2D materials has triggered an explosive interest in low dimensional material research. We extend this idea to 1D van der-Waals materials. Three 1D semiconductors (SbSeI, SbSI, and SbSBr) with high stability and novel electronic properties are discovered using first principles calculations. Both the dynamical and the thermal stability of these 1D materials are examined. We demonstrate that their nanowire thinner than 7Å can be easily obtained by mechanical exfoliation, hydrothermal method, or sonochemical method. The bulk-to-1D transition results in dramatic changes in band gap, effective mass, and static dielectric constant due to quantum confinement, making 1D SbSeI a highly promising channel material for transistors with gate length shorter than 1 nm. Under small uniaxial strain, these materials are transformed from indirect into direct band gap semiconductors, paving the way for optoelectronic devices and mechanical sensors. Moreover, the thermoelectric performance of these materials is significantly improved over their bulk counterparts. These highly desirable properties render SbSeI, SbSI, and SbSBr promising 1D materials for applications in future microelectronics, optoelectronics, mechanical sensors, and thermoelectrics.

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Efficient and Stable Antimony Selenoiodide Solar Cells

Nie

Risqi

et al. 2021

Advanced Science

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Although antimony selenoiodide (SbSeI) exhibits a suitable bandgap as well as interesting physicochemical properties, it has not been applied to solar cells. Here the fabrication of SbSeI solar cells is reported for the first time using multiple spin-coating cycles of SbI 3 solutions on Sb 2 Se 3 thin layer, which is formed by thermal decomposition after depositing a single-source precursor solution. The performance exhibits a short-circuit current density of 14.8 mA cm −2 , an open-circuit voltage of 473.0 mV, and a fill factor of 58.7%, yielding a power conversion efficiency (PCE) of 4.1% under standard air mass 1.5 global (AM 1.5 G, 100 mW cm −2 ). The cells retain ≈90.0% of the initial PCE even after illuminating under AM 1.5G (100 mW cm −2 ) for 2321 min. Here, a new approach is provided for combining selenide and iodide as anions, to fabricate highly efficient, highly stable, green, and low-cost solar cells.Small effective mass, large dielectric constant, high band dispersion level, and valence band maximum with antibonding states are desirable properties for highly efficient and defect-tolerant light harvesters. [1] Most of the aforementioned properties exist in materials containing metal cations with ns 2 valence electron configuration, [2] owing to their high bandwidth conduction band and high Born effective charge derived from large spin-orbit effects as well as their soft Polaris ability. Popular light harvesters including halides or chalcogenides of Pb 2+ , [3] Sn 2+ , [4] Ge 2+ , [5] Sb 3+ , [6] and Bi 3+[7] contain metal cations with the ns 2 valence electron configuration. However, most of them are affected by one or several issues, such as low efficiency, low stability, toxicity, and high cost. Hence, efficient, stable, green, and low-cost light-harvesters must be developed.As important material exhibiting the ns 2 electronic configuration, metal chalcohalides have received extensive attention owing to their interesting physical and chemical properties. [8] Because of the distinct bonding preferences of chalcogenide and halide atoms, to form stable sites in compounds, the competition among atoms might yield unique structures and properties. [9] Additionally, a wide bandgap range can be obtained in these materials because halide and chalcogenide coexist as anions; hence,

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Sonochemical preparation of SbSeI gel

Cited by 24 publications

References 28 publications

Photoferroelectric Nanowires

Photoferroelectric Nanowires

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Efficient and Stable Antimony Selenoiodide Solar Cells

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