Some theoretical and technological aspects of uncooled HgCdTe detectors: a review

Djurić, Z.; Jakšić, Zoran; Djinovic, Z.; Matić, Milan; Lazić, Žarko

doi:10.1016/0026-2692(94)90107-4

Cited by 12 publications

(8 citation statements)

References 35 publications

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“…According to these authors the absorption coefficient after the cutoff wavelength, corresponding to Eg, equals zero. It was shown experimentally [131] that the absorption coefficient above this wavelength decreases exponentially, and that, due to the Moss-Burstein effect [134], it is necessary to modify Urbach's law [131] to describe satisfactorily the dependence of the intrinsic absorption coefficient on the wavelength and on the carrier concentration [20]. The absorption coefficient modified in such a way shows excellent agreement with some recently published experimental data [132], as presented in Fig.…”

Section: Optical Characteristics Of Isovpe Layerssupporting

confidence: 75%

“…detectors; the detectivities, D* are about l0 s cm Hz 1/2 W -1 in the wide wavelength range 4-12 gm and the cutoff frequencies approach l0 s Hz. These detectors do not require cooling [20,21,22] and their detectivities are higher than those of pyroelectric detectors for frequencies above 10 kHz [20]. These values can be achieved by an appropriate choice of material (the composition and doping profile).…”

Section: Introductionmentioning

confidence: 87%

“…To calculate the intrinsic absorption coefficient, we used Kane's model [133], generalized by the works of Blue [129] and Anderson [130], and applied to Hgl_xCdxTe [20]. According to these authors the absorption coefficient after the cutoff wavelength, corresponding to Eg, equals zero.…”

Section: Optical Characteristics Of Isovpe Layersmentioning

confidence: 99%

“…The reason for this is that this product is only weakly dependent on the temperature in the range 77-300 K for the case of photoconductive (PC) photodetectors [20].…”

Section: Introductionmentioning

confidence: 99%

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Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

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Section: Optical Characteristics Of Isovpe Layerssupporting

confidence: 75%

Section: Introductionmentioning

confidence: 87%

Section: Optical Characteristics Of Isovpe Layersmentioning

confidence: 99%

“…The reason for this is that this product is only weakly dependent on the temperature in the range 77-300 K for the case of photoconductive (PC) photodetectors [20].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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“…So it is clear that operation of a typical detector without cooling is most useful because they could be light weight, rugged, reliable and convenient to use. Affordable high performance infrared systems require cost-effective infrared detectors that operate without cooling [1][2][3][4][5][6][7][8][9][10][11][12]. Thus special attention is put on realization and optimization of the devices for room temperature operation having short response time [4,8,12,13].…”

Section: Introductionmentioning

confidence: 99%