Some second-phase structures in gallium arsenide annealed after implantation with zinc

Abstract

After GaAs was implanted with 1015/cm2 60-keV Zn ions at ambient temperature, annealing with a rf-sputtered SiO2 passivating layer resulted in the formation of the second-phase structures ZnGa2O4 at 800 °C and primarily Zn3As2 at 600 °C. Possible relationships between the second-phase structures and the electrical properties of the ion-implanted annealed regions are discussed.