PESC97. Record 28th Annual IEEE Power Electronics Specialists Conference. Formerly Power Conditioning Specialists Conference 19
DOI: 10.1109/pesc.1997.616820
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Some scaling issues in the active voltage control of IGBT modules for high power applications

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Cited by 12 publications
(2 citation statements)
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“…The active gate drive circuit presented originated in [13] where the rate of the IGBT collector emitter voltage at turn-off is able to track a specified reference voltage signal. This concept is further enhanced by allowing the turn-off and turn-on transition to vary at different rates specified by the gate drive controller circuit [14] as shown in …”
Section: Discussionmentioning
confidence: 99%
“…The active gate drive circuit presented originated in [13] where the rate of the IGBT collector emitter voltage at turn-off is able to track a specified reference voltage signal. This concept is further enhanced by allowing the turn-off and turn-on transition to vary at different rates specified by the gate drive controller circuit [14] as shown in …”
Section: Discussionmentioning
confidence: 99%
“…To overcome these differences, the reference voltage has a two-step turn-off edge; a step and a ramp. During the step, the gate drive overcomes the non-linearities associated with the IGBT's Miller capacitance and the gate delays [9]. At the end of this step, all the IGBTs are ready to switch off with a predefined dv dt ; the ramp.…”
Section: Introductionmentioning
confidence: 99%