SummaryFreshly cleaved single crystals of KI:TI containing various concentrations of Tl have been irradiated in a vacuum monochromator in the 2800-1100 A region at temper.atures between -140 and 45 °0. The relative luminescence efficiencies in the Tl absorption bands and the host crystal fundamental absorption show that energy is transferred from host crystal to impurity centre to produce luminescence at room temperatures. To the high energy side of a threshold, which appears to depend on activator concentration, the luminescence efficiency is superlinear above about 15 °0 for KI:Tl (0·0005%). Luminescence production shows a slow build·up which has been analysed in detail for irradiation at 1608 and 1216 A. The build-up curve is found to have the form where Ls is the saturation luminescence, L t the luminescence t seconds after illumination starts, and A, E, y, and z are parameters associated with two processes for luininescence production involving recombination and the attainment of equilibrium in the filling of traps. The efficiency of the first process is superlinear and of the second approximately linear. As in the case of AgBt-AgI examined by Moser and Urbach, there is no observable phosphorescent decay. Thermal escape from traps followed by radiationless de-excitation has been observed by investigating the changes of the instantaneous component of luminescence production with varying intervals of darkness. An explanation is proposed in terms of the migration of holes from shallower to deeper traps near luminescence centres followed by recombination with free electrons.