Some properties of silicon Si(p) detectors

Avdeichikov, V.V.

doi:10.1016/0029-554x(78)90196-9

Cited by 8 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although in principle more radiation resistant than η-type, p-type silicon surface barriers have received less attention due to the difficulty of obtaining a sufficient potential barrier height. Nevertheless, some successful results have been published [92]. Surface barriers with depletion layers of more than 10 mm have been realized on uncompensated high resistivity (up to 100 kQ.cm) p-type silicon as obtained by very high purification of the base material [93], To ensure long term stability, high reverse voltage, and low leakage current, the edges of the Schottky contact are protected with an epoxy glue after metallization.…”

Section: Silicon Detectors a Silicon Surface Barriers And P-n Jumentioning

confidence: 99%

3 Semiconductor Detectors

1997

Experimental Techniques in Nuclear Physics

View full text Add to dashboard Cite

A. Sensitive region and charge collection 89 B. Detector materials 93 III. Germanium detectors 94 A. Lithium-drifted germanium detectors 94 B. Gamma-compensated germanium detectors 95 C. High-purity germanium detectors 95 D. Timing properties of germanium detectors 97 E. Radiation damage in germanium detectors 98 F. Temperature behaviour 98 IV. Silicon detectors 99 A. Silicon surface barriers and p-n junctions 99 B. Lithium-drifted silicon detectors 102 C. Position sensitive silicon detectors 103 D. Radiation damage in silicon detectors 106 E. Amorphous silicon detectors 108 V. Exotic materials 108 A. Cadmium telluride 109 B. Mercuric iodide 109 VI. Conclusion References 110

show abstract

Section: Silicon Detectors a Silicon Surface Barriers And P-n Jumentioning

confidence: 99%