Phys. Stat. Sol. (a)

1978

DOI: 10.1002/pssa.2210490218

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Some properties of miniature NbNbOxPb tunnel junctions

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Abstract: NbNbOxPb tunnel junctions with minimum dimensions of 10 × 10 μm2 are investigated for determining the gap voltage in the temperature range 1.8 to 9 K. The experimental gap values are compared with values, which are calculated from the BCS theory. The deviations are explained with dissipative processes. Moreover the distribution of the current density within the tunnel area for one representative tunnel junction is determined with the Ic(Φ)‐curve on the base of new theoretical equations.

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Cited by 8 publications

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Critical currents of Nb-NbOx-Pb tunnel junctions with high normal resistance

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1979

Phys. Stat. Sol. (a)

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Generally the relation between the normal tunneling resistance and the critical Josephson current is given by the equation of Ambegaokar' and Baratoff /l/. In the case of tunnel junctions with high resistance one has to expect deviations f r o m these equations because here fluctuations begin to be important and the critical currents will be smaller. We report our experimental results concerning these deviations

Critical currents of Nb-NbOx-Pb tunnel junctions with high normal resistance

¹

,

²

1979

Phys. Stat. Sol. (a)

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Generally the relation between the normal tunneling resistance and the critical Josephson current is given by the equation of Ambegaokar' and Baratoff /l/. In the case of tunnel junctions with high resistance one has to expect deviations f r o m these equations because here fluctuations begin to be important and the critical currents will be smaller. We report our experimental results concerning these deviations

The influence of vanadium oxide on the properties of Josephson tunnel junctions

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1979

Phys. Stat. Sol. (a)

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The properties of VNb–NbOx–Pb and NbV–VOx–Pb Josephson tunnel junctions are investigated. The behaviour of the VNb–NbOx–Pb junctions is as expected for tunnels with proximity effect. The junctions with the VOx barriers have anomalous small critical currents and very large excess currents. Both, the temperature dependence of the critical current and the excess current of these junctions deviate strongly from that of other known tunnel junctions. The interaction of the tunneling electrons with strong internal magnetic fields within the VOx is discussed as a possible reason of these deviations.

Investigations of the current density distribution in NbNbOxPb tunnel junctions

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Phys. Stat. Sol. (a)

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Current density distributions in some NbNbOxPb tunnel junctions with dimensions of 100 × 100 μm2 to 10 × 10 μm2 are calculated. The calculations are made on base of new theoretical equations for the dependence of critical current on the magnetical field. The differences in the current density distributions between tunnel junctions with dimensions of 10 × 10 μm2 and dimensions of 30 × 30 μm2 and 100 × 100 μm2 are interpreted by the activity of special processes at the formation of the tunnel barrier. Moreover the investigations show, that an increase of the oxygen fraction at the formation of the tunnel barrier cause an increase of the tunnel junction resistor. But the current density distribution will be not modified qualitatively by this.

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