Some physical properties of thin MgO films produced by reactive evaporation

Soloniaina, Rakotomiraho; Charles, E.; Boyer, André

doi:10.1007/bf00547957

Cited by 3 publications

(3 citation statements)

References 9 publications

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“…Most of the MgO films reported in the literatures were prepared by vacuum deposition methods such as pulsed laser deposition [8][9][10], pulsed-molecularbeam evaporation [16], sputtering [11,17,18], and other reactive evaporations [19][20][21][22], etc. A recent paper by Yoon et al disclosed that the (111) oriented MgO film on Si substrate was prepared by spincoating sol-gel method, using magnesium ethoxide as the starting material [23].…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of MgO thin film prepared by sol-gel technique

Mackenzie

1997

J Sol-Gel Sci Technol

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Abstract. MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800~ The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8 • 105 V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.

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Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of MgO thin film prepared by sol-gel technique

Mackenzie

1997

J Sol-Gel Sci Technol

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“…In MgO and TiO 2 traps are 3-4 eV [22][23][24] and 0.3-0.9 eV [25][26][27], respectively, below the bottom of their conduction bands, i.e. in both dielectrics the energy levels of traps are positioned almost at the same distance from the vacuum level.…”

Section: Band Structurementioning

confidence: 99%

“…Using data from [17][18][19][20][21][22][23][24][25][26][27], in figure 7 are drawn the metal-dielectric-gas (MDG) band structures of the used electrode/coating combinations. The barrier at the dielectricgas (DG) interface of TiO 2 coating is 3.9 eV, while the height of the barrier of MgO coating is only 0.8 eV.…”

Section: Band Structurementioning

confidence: 99%

Photoinduced field-assisted electron emission from dielectric-coated electrodes into gases

Josepson¹,

Laan²,

Aarik³

et al. 2008

J. Phys. D: Appl. Phys.

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A photoinduced non-self-sustained discharge in a point–plane gap at near-atmospheric pressures in nitrogen and nitrogen–oxygen mixture was studied. Molybdenum and platinum points were coated with thin layers of MgO and TiO2 of different thicknesses. Static current–voltage characteristics were recorded at different intensities of triggering light, layer thickness and gas pressure. The common regularities of current–voltage characteristics were independent of the electrode/coating combinations used. The studies showed that the field-assisted two-step model of emission describes the experimental findings. The electron emission is controlled by Schottky and Fowler–Nordheim mechanisms at the metal–dielectric interface and by a recombination of positive ions with ‘hot’ and free electrons near the dielectric–gas interface.

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