Some physical investigations on ZnS1−xSex films obtained by selenization of ZnS sprayed films using the Boubaker polynomials expansion scheme

Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

“…Until now, a wide range of characterization studies of the ZnSSe thin films have been reported, including structural, electrical and optical properties variations in dependence of the S/Se ratio. 2,5,7,[10][11][12][13][14][15][16] Raman spectroscopy as such has been extensively used for investigating the lattice vibration dynamics in these systems. 12,14,17,18 Raman scattering is a powerful non-destructive method which can provide useful information on the structure, morphology and chemical composition of semiconductor materials, as well as on the photon-electron and electron-phonon interactions occurring in these materials.…”

“…Changing the ratio of S to Se of ZnSSe compounds leads to tuning of the electron affinity and electrical properties which greatly enhances the blue response of the material. 7 ZnSSe may also appear as a secondary phase in other multinary compounds, like Cu 2 ZnSn(S,Se) 4 , which have shown promising results for application as thin film absorber layers in solar cells. 8,9 It has been shown that ZnSSe secondary phases, besides having unfavorable effects on the conversion efficiency of solar cells, are also quite challenging for detection using standard characterization techniques such as X-ray diffraction (XRD).…”

Theoretical investigation of sulfur defects on structural, electronic, and elastic properties of ZnSe semiconductor

“…[11] For example, a ZnSe/ZnSe 1−x S x hetero-structure is used in a blue semiconductor laser device with a high optical output and differential quantum efficiency at room temperature. [3] Several theoretical investigations have been carried out: (i) Ventkata et al [12] studied a buffer on ZnS 0.5 Se 0.5 based thin film solar cells, (ii) Kassali et al [13] described composition and temperature dependent opti-cal band gaps in ZnS 1−x Se x by using VCA and the empirical pseudo-potential method, (iii) Mesri et al [14] reported a firstprinciples study of lattice constants and bowing parameter in ZnSe 1−x S x compounds using zinc blende (ZB), CuAu-I, and chalcopyrite structures, (iv) ZnSe 1−x S x films have been studied by Fridjine et al [15] In this paper, we made first principle calculations for the structural, electronic, mechanical, and elastic properties of sulfur-doped ZB ZnSe by local density approximation (LDA) plus optimized effective Hubbard parameter U (i.e., LDA+U). The rest of this paper is arranged as follows.…”

Bandgap engineering by substitution of S by Se in nanostructured ZnS1−xSex thin films grown by soft chemical route for nontoxic optoelectronic device applications

“…Hence, ZnS 1−x Se x nanostructure thin films and their use as non toxic alternative for window layer in low cost solar cell fabrication have gained potential importance. Furthermore, electron affinity and electrical properties of these films can be tuned by changing the ratio of S to Se, which helps to enhance the blue response to the material [9]. Earlier, thin films of ZnS 1−x Se x have been prepared using molecular beam epitaxy [10,11], atomic layer epitaxy [12], high pressure sputtering [13], metal organic vapor epitaxy [14,15], metal organic chemical vapor deposition (MOCVD) [16], laser ablation [17], close space evaporation [6], spray pyrolysis [18], epitaxial growth [19], thermal evaporation [20], Successive Ionic Layer Adsorption and Reaction (SILLAR) [21], and soft chemical route technique [22][23][24], etc.…”