The author first decribes a new form of the thermionic method based on the shift of resistance characteristics. The resistance of the diode is measured with an A.C. bridge, care being taken to keep the emitter at constant temperature, even in the presence of gas. Cells suitable for tungsten deposits are described. The WH, WXe, and HgXe films have been studied by both the thermionic and the condenser method, and excellent agreement has been found for the surface potentials. For the WH and WN films, the surface potentials obtained are in grave disagreement with those of Bosworth 4) and of Bosworth and Rideal 5, 6) on tungsten wires. It is shown that Bosworth's value cannot refer to a WH film. The work function of a deposit stabilized between 293 and 428° K is close to that of a polycrystalline wire. Sintering increases the work function.