1981
DOI: 10.1016/0010-938x(81)90034-2
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Some observations on void formation in Fe3O4 layers on Fe

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Cited by 17 publications
(5 citation statements)
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“…But, serial sectioning combined with optical microscopy failed to detect any pores which had continuous connectivity to the metal/ oxide interface. Similar conclusions were reached by Hussey and Graham (12) for pores in Fe~O4 films grown on Fe. It is possible that the fissures responsible for inward oxygen penetration have a transient existence such that during oxidation fissures are continually being generated and are resealing.…”
Section: Discussionsupporting
confidence: 87%
“…But, serial sectioning combined with optical microscopy failed to detect any pores which had continuous connectivity to the metal/ oxide interface. Similar conclusions were reached by Hussey and Graham (12) for pores in Fe~O4 films grown on Fe. It is possible that the fissures responsible for inward oxygen penetration have a transient existence such that during oxidation fissures are continually being generated and are resealing.…”
Section: Discussionsupporting
confidence: 87%
“…Nevertheless, no pore with continuous connectivity to the metal/oxide interface was detected. Similar conclusions were reached by Martinelli et al [4][5][6] and Hussey and Graham [20] for oxide grown respectively on T91 surface in oxygen saturated Pb-Bi and on Fe in air and CO 2 . Do they close as soon as CO 2 molecules or other oxidant species enter in which makes thus the mechanism of void-induced duplex oxide growth inadequate as some authors suggest it or can they stay opened for enough time for the proposed mechanism to process?…”
Section: Viability Of Nanochannel Formation and Existence During The supporting
confidence: 82%
“…Once arrived at the oxide/metal interface, the oxygen-bearing molecules react with the metallic elements to form the inner spinel oxide and release its linked atom H, S, C or Pb. Past studies have inferred that this porosity exists in channel form with a nanometric diameter size [23,24]. Depending on the study and the authors, the nanochannel network would be due to either cracks formed through the oxide layer because of oxide growth stresses [21,23,[25][26][27][28] or would result from oxide dissociation over voids formed at the oxide/metal interface by vacancies condensation [29,30].…”
Section: Mechanism Of Duplex Oxide Layer Formation On T91mentioning
confidence: 96%