1991
DOI: 10.1002/pssb.2221640133
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Some Magnetic Properties of Thin Ferromagnetic Film with Enhanced Surface Exchange Interactions

Abstract: Thin S = 112 ferromagnetic film with exchange interaction enhanced near the film surface is considered in the Ising model. As a result the phase diagrams, the magnetization profiles, and magnetization curves for several particular cases are presented. A modified definition of the critical A , parameter for the thin film case is also proposed.Im Ising-Model1 wird eine ferromagnetische Schicht mit S = 112 und erhohter Austauschwechselwirkungin der Nahe der Schichtoberflache untersucht. Als Ergebnis werden Phasen… Show more

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Cited by 38 publications
(13 citation statements)
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“…The method is superior to the standard molecular field approach and thus it is particularly well suited for the description of mixed-spins as well as layered systems [22][23][24]. Very recently, a similar effective field approach has been applied to the simplest spin- 1 2 ML with double-plane interface considered as a stochastic binary alloy [25].…”
Section: Introductionmentioning
confidence: 99%
“…The method is superior to the standard molecular field approach and thus it is particularly well suited for the description of mixed-spins as well as layered systems [22][23][24]. Very recently, a similar effective field approach has been applied to the simplest spin- 1 2 ML with double-plane interface considered as a stochastic binary alloy [25].…”
Section: Introductionmentioning
confidence: 99%
“…In the films the surface magnetization maintains the same finite magnetization in the central atomic layers. [46] and Wiatrowski et al [47].…”
Section: Resultsmentioning
confidence: 97%
“…It is, among other things, the theory of disordered diluted alloys [3,14,15], random field problems [15,16], amorphization [14,17,18] and surface magnetism [4,19]. In the equivalent, integral operator version, the method has been applied to studies of thin magnetic films [20,21]. At the same time, great efforts were put into application of H-K method to higher spins problem [22,23].…”
Section: Introductionmentioning
confidence: 99%