Some features of the electrical forming of MDM systems based on silicon oxynitride films

Бурдовицин, В. А.; Galanskii, B. L.; Smirnova, K. I.; Yankelevich, Y.

doi:10.1007/bf00952560

Cited by 2 publications

(2 citation statements)

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“…Therefore, the broken-down devices are mostly discarded and are not considered worth studying. Common symptoms of thin film breakdown may be cited as decreased shunt resistance [1,2], nanocrystallization [3,4], voltage-controlled negative resistance [5], electron emission [6,7], memory effect [8,9] and intense electroluminescence (EL) [10,11], the last one being the main motivation of this work. The breakdown event is usually referred to as electroforming or forming when the final product is of scientific and/or technological importance.…”

Section: Introductionmentioning

confidence: 99%

“…So far, most of the devices reported to be electroformed were either metal-insulator-metal [9,10] or metal-insulator-semiconductor [11] structures, where the electroforming and the accompanying light emission were restricted to filamentary regions within the diode. Consequently, this interesting phenomenon has not taken much attention due to its difficult control and lack of uniformity.…”

Section: Introductionmentioning

confidence: 99%

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Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

Anutgan

Atilgan

et al. 2013

Philosophical Magazine

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Hydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.

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